Anachip AX9902MS 2n and 2p-channel enhancement mode power mosfet Datasheet

AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
„ Product Summary
CH
BVDSS (V)
RDS(ON) (mΩ)
ID (A)
N
P
30
-30
40
70
4.3
-3.3
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Pin Descriptions
„ Pin Assignments
N1G
1
8
P1G
N1D/P1D
2
7
P1S/P2S
N1S/N2S
3
6
N2D/P2D
N2G
4
5
P2G
SO-8
Pin Name
Description
N1G
N1D/P1D
N1S/N2S
N2G
P2G
N2D/P2D
P1S/P2S
P1G
Gate (NMOS1)
Drain(NMOS1) / Drain(PMOS1)
Source(NMOS1) / Source(NMOS2)
Gate (NMOS2)
Gate (PMOS2)
Drain(NMOS2) / Drain(PMOS2)
Source(PMOS1) / Source(PMOS2)
Gate (PMOS1)
„ Ordering information
A X
Feature
9902M X
PN
F :MOSFET
X
Package
Packing
S: SO-8
Blank : Tube or Bulk
A : Tape & Reel
„ Block Diagram
P1S
P2S
P1G
P2G
P1N1D
P2N2D
N1G
N2G
N2S
N1S
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
ID
Continuous Drain Current (Note 1)
IDM
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
N-Channel P-Channel
30
-30
±12
±12
TA=25ºC
4.3
-3.3
TA=70ºC
3.4
-2.6
20
-20
TA=25ºC
1.38
0.01
-55 to 150
-55 to 150
Drain-Source Voltage
Gate-Source Voltage
Units
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJA
Parameter
Thermal Resistance Junction-Ambient (Note 1)
Value
90
Max.
Units
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
VGS=0V, ID=-250uA
Reference to 25 ºC,
∆BVDSS/∆ Breakdown Voltage Temperature ID=1mA
Coefficient
TJ
Reference to 25 ºC,
ID=-1mA
VGS=10V, ID=5A
VGS=4.5V, ID=4A
VGS=2.5V, ID=2A
Static Drain-Source
RDS(ON)
On-Resistance (Note 3)
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
VDS= VGS, ID=250uA
VGS(th)
Gate-Threshold Voltage
VDS= VGS, ID=-250uA
VDS=5V, ID=4A
gfs
Forward Transconductance
VDS=-5V, ID=-3A
TJ=25ºC VDS=30V, VGS=0V
Drain-Source Leakage TJ=70ºC VDS=24V, VGS=0V
IDSS
Current
TJ=25ºC VDS=-30V, VGS=0V
TJ=70ºC VDS=-24V, VGS=0V
BVDSS
Drain-Source breakdown Voltage
IGSS
Gate-Source Leakage
VGS=±12V
Qg
Total Gate Charge (Note 3)
Qgs
Gate-Source Charge
Qgd
Gate-Drain (“Miller”) Charge
N-Channel
VDS=24V, VGS=4.5V
ID=4A
P-Channel
VDS=-24V, VGS=-4.5V
ID=-3A
Anachip Corp.
www.anachip.com.tw
CH
N
P
Limits
Min.
Typ.
30
-30
-
Max.
-
N
-
0.03
-
P
-
-0.02
-
0.5
-0.5
-
13
8
9
10
1.6
2
4
3
40
50
60
70
90
120
1
25
-1
-25
±100
±100
15
16
-
V
V/ºC
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Rev. 1.0
2/8
Unit
mΩ
V
S
uA
nA
nC
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Electrical Characteristics (TJ=25ºC unless otherwise specified)
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
N-Channel
VDS=15V, VGS=5V
ID=1A, RG=3.3Ω,
RD=15Ω
P-Channel
VDS=-15V, VGS=-5V
ID=-1A, RG=3.3Ω,
RD=15Ω
N-Channel
VGS=0V, VDS=25V
f=1.0MHz
P-Channel
VGS=0V, VDS=-25V
f=1.0MHz
CH
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Limits
Min.
Typ.
8
8
9
9
17
25
5
14
630
690
140
170
65
75
Max.
1000
1100
-
CH
N
P
N
Limits
Min.
Typ.
17
Max.
1.2
-1.2
-
Unit
ns
pF
„ Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage (Note 3)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=-1.2A, VGS=0V
N-Channel
IS=4A, VGS=0V
dl/dt=100A/µs
P-Channel
IS=-3A, VGS=0V
dl/dt=-100A/µs
P
-
25
-
N
-
9
-
P
-
20
-
Unit
V
ns
nC
2
Note 1: Surface Mounted on 1 in copper pad of FR4 board; t ≤10sec; 186ºC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature
Note 3: Pulse width < 300us, duty cycle < 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
3/8
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (N-Channel)
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
4/8
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (N-Channel) (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
5/8
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (P-Channel)
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
6/8
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (P-Channel) (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
7/8
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
„ Marking Information
SO-8L
( Top View )
8
Logo
9902M
AA Y W X
Part Number
1
Lot code:
"A~Z": 01~26;
"A~Z": 27~52
Week code:
"A~Z": 01~26;
"A~Z": 27~52
Year code:
"4" =2004
~
Factory code
„ Package Information
Package Type: SO-8L
D
7
6
5
2
3
4
E1
E
8
1
L
DETAIL A
B
C
A1
A
e
θ
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A
A1
B
C
D
E
E1
L
θ
e
Dimensions In Millimeters
Min.
Nom.
Max.
1.35
1.55
1.75
0.10
0.18
0.25
0.33
0.41
0.51
0.19
0.22
0.25
4.80
4.90
5.00
5.80
6.15
6.50
3.80
3.90
4.00
0.38
0.71
1.27
o
o
o
0
4
8
1.27 TYP.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
8/8
Sep 22, 2005
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