Vishay AZ23B16-V Small signal zener diodes, dual Datasheet

AZ23-V-Series
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
• These diodes are also available in other
case styles and configurations including:
the dual diode common cathode configu- e3
ration with type designation DZ23, the single diode SOT23 case with the type designation
BZX84C, and the single diode
SOD123 case with the type designation BZT52C.
• Dual Silicon Planar Zener Diodes, Common
Anode
• The Zener voltages are graded according to the
international E 24 standard
• The parameters are valid for both diodes in one
case. ΔVZ and Δrzj of the two diodes in one case is
≤ 5%
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
2
18070
Mechanical Data
Case: SOT23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel, (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel, (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
1)
Symbol
Value
Unit
Ptot
3001)
mW
Symbol
Value
Unit
RthJA
4201)
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Device on fiberglass substrate, see layout on page 6
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Device on fiberglass substrate, see layout on page 6
Document Number 85759
Rev. 1.5, 24-Mar-06
www.vishay.com
1
AZ23-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener Voltage Range1)
VZ at IZT
Dynamic Resistance
rzj at
IZT = 5 mA,
f = 1 kHz
rzj at
IZT = 1 mA,
f = 1 kHz
Ω
V
Test
Current
Temperature Coefficient
of Zener Voltage
Reverse
Voltage
IZT
αVZ at IZT
VR at
IR = 100 nA
mA
10-4/°C
V
min
max
min
max
AZ23C2V7-V
D1
2.5
2.9
75 (< 83)
< 500
5
-9
-4
-
AZ23C3V0-V
D2
2.8
3.2
80 (< 95)
< 500
5
-9
-3
-
AZ23C3V3-V
D3
3.1
3.5
80 (< 95)
< 500
5
-8
-3
-
AZ23C3V6-V
D4
3.4
3.8
80 (< 95)
< 500
5
-8
-3
-
AZ23C3V9-v
D5
3.7
4.1
80 (< 95)
< 500
5
-7
-3
-
AZ23C4V3-V
D6
4
4.6
80 (< 95)
< 500
5
-6
-1
-
AZ23C4V7-V
D7
4.4
5
70 (< 78)
< 500
5
-5
2
-
AZ23C5V1-V
D8
4.8
5.4
30 (< 60)
< 480
5
-3
4
> 0.8
AZ23C5V6-V
D9
5.2
6
10 (< 40)
< 400
5
-2
6
>1
AZ23C6V2-V
D10
5.8
6.6
4.8 (< 10)
< 200
5
-1
7
>2
AZ23C6V8-V
D11
6.4
7.2
4.5 (< 8)
< 150
5
2
7
>3
AZ23C7V5-V
D12
7
7.9
4 (< 7)
< 50
5
-3
7
>5
AZ23C8V2-V
D13
7.7
8.7
4.5 (< 7)
< 50
5
4
7
>6
AZ23C9V1-V
D14
8.5
9.6
4.8 (< 10)
< 50
5
5
8
>7
1)
AZ23C10-V
D15
9.4
10.6
5.2 (< 15)
< 70
5
5
8
> 7.5
AZ23C11-V
D16
10.4
11.6
6 (< 20)
< 70
5
5
9
> 8.5
AZ23C12-V
D17
11.4
12.7
7 (< 20)
< 90
5
6
9
>9
AZ23C13-V
D18
12.4
14.1
9 (< 25)
< 110
5
7
9
> 10
AZ23C15-V
D19
13.8
15.6
11 (< 30)
< 110
5
7
9
> 11
AZ23C16-V
D20
15.3
17.1
13 (< 40)
< 170
5
8
9.5
> 12
AZ23C18-V
D21
16.8
19.1
18 (< 50)
< 170
5
8
9.5
> 14
AZ23C20-V
D22
18.8
21.2
20 (< 50)
< 220
5
8
10
> 15
AZ23C22-V
D23
20.8
23.3
25 (< 55)
< 220
5
8
10
> 17
AZ23C24-V
D24
22.8
25.6
28 (< 80)
< 220
5
8
10
> 18
AZ23C27-V
D25
25.1
28.9
30 (< 80)
< 250
5
8
10
> 20
AZ23C30-V
D26
28
32
35 (< 80)
< 250
5
8
10
> 22.5
AZ23C33-V
D27
31
35
40 (< 80)
< 250
5
8
10
> 25
AZ23C36-V
D28
34
38
40 (< 90)
< 250
5
8
10
> 27
AZ23C39-V
D29
37
41
50 (< 90)
< 300
5
10
12
> 29
AZ23C43-V
D30
40
46
60 (< 100)
< 700
5
10
12
> 32
AZ23C47-V
D31
44
50
70 (< 100)
< 750
5
10
12
> 35
AZ23C51-V
D32
48
54
70 (< 100)
< 750
5
10
12
> 38
Tested with pulses tp = 5 ms
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2
Document Number 85759
Rev. 1.5, 24-Mar-06
AZ23-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener Voltage Range1)
VZ at IZT
Dynamic Resistance
rzj at
IZT = 5 mA,
f = 1 kHz
rzj at
IZT = 1 mA,
f = 1 kHz
Ω
V
Test
Current
Temperature Coefficient
of Zener Voltage
Reverse
Voltage
IZT
αVZ at IZT
VR at
IR = 100 nA
mA
10-4/°C
V
min
max
min
max
AZ23B2V7-V
D1
2.65
2.75
75 (< 83)
< 500
5
-9
-4
-
AZ23B3V0-V
D2
2.94
3.06
80 (< 95)
< 500
5
-9
-3
-
AZ23B3V3-V
D3
3.23
3.37
80 (< 95)
< 500
5
-8
-3
-
AZ23B3V6-V
D4
3.53
3.67
80 (< 95)
< 500
5
-8
-3
-
AZ23B3V9-V
D5
3.82
3.98
80 (< 95)
< 500
5
-7
-3
-
AZ23B4V3-V
D6
4.21
4.39
80 (< 95)
< 500
5
-6
-1
-
AZ23B4V7-V
D7
4.61
4.79
70 (< 78)
< 500
5
-5
2
-
AZ23B5V1-V
D8
5
5.2
30 (< 60)
< 480
5
-3
4
> 0.8
AZ23B5V6-V
D9
5.49
5.71
10 (< 40)
< 400
5
-2
6
>1
AZ23B6V2-V
D10
6.08
6.32
4.8 (< 10)
< 200
5
-1
7
>2
AZ23B6V8-V
D11
6.66
6.94
4.5 (< 8)
< 150
5
2
7
>3
AZ23B7V5-V
D12
7.35
7.65
4 (< 7)
< 50
5
-3
7
>5
AZ23B8V2-V
D13
8.04
8.36
4.5 (< 7)
< 50
5
4
7
>6
AZ23B9V1-V
D14
8.92
9.28
4.8 (< 10)
< 50
5
5
8
>7
AZ23B10-V
D15
9.8
10.2
5.2 (< 15)
< 70
5
5
8
> 7.5
AZ23B11-V
D16
10.8
11.2
6 (< 20)
< 70
5
5
9
> 8.5
AZ23B12-V
D17
11.8
12.2
7 (< 20)
< 90
5
6
9
>9
AZ23B13-V
D18
12.7
13.3
9 (< 25)
< 110
5
7
9
> 10
AZ23B15-V
D19
14.7
15.3
11 (< 30)
< 110
5
7
9
> 11
AZ23B16-V
D20
15.7
16.3
13 (< 40)
< 170
5
8
0.5
> 12
AZ23B18-V
D21
17.6
18.4
18 (< 50)
< 170
5
8
0.5
> 14
AZ23B20-V
D22
19.6
20.4
20 (< 50)
< 220
5
8
10
> 15
AZ23B22-V
D23
21.6
22.4
25 (< 55)
< 220
5
8
10
> 17
AZ23B24-V
D24
23.5
24.5
28 (< 80)
< 220
5
8
10
> 18
AZ23B27-V
D25
26.5
27.5
30 (< 80)
< 250
5
8
10
> 20
AZ23B30-V
D26
29.4
30.6
35 (< 80)
< 250
5
8
10
> 22.5
AZ23B33-V
D27
32.3
33.7
40 (< 80)
< 250
5
8
10
> 25
AZ23B36-V
D28
35.3
36.7
40 (< 90)
< 250
5
8
10
> 27
AZ23B39-V
D29
38.2
39.8
50 (< 90)
< 300
5
10
12
> 29
AZ23B43-V
D30
42.1
43.9
60 (< 100)
< 700
5
10
12
> 32
AZ23B47-V
D31
46.1
47.9
70 (< 100)
< 750
5
10
12
> 35
AZ23B51-V
D32
50
52
70 (< 100)
< 750
5
10
12
> 38
1)
Tested with pulses tp = 5 ms
Document Number 85759
Rev. 1.5, 24-Mar-06
www.vishay.com
3
AZ23-V-Series
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IF
mA
103
Ω
103
102
5
4
3
2
10
rzth
TJ = 100 °C
1
rzth = RthA x VZ x
Δ VZ
ΔTj
102
10-1
5
4
3
TJ = 25 °C
2
10-2
10
10-3
5
4
3
10-4
negative
2
10-5
0
positive
1
0.2
0.4
0.6
0.8
1V
1
VF
18114
2
3
4 5
10
18121
Figure 1. Forward characteristics
2
3 4 5
100 V
VZ at IZ = 5 mA
Figure 4. Thermal Differential Resistance vs. Zener Voltage
Ω
100
mW
500
7
5
4
400
rzj
Ptot
3
2
300
10
7
200
5
4
3
100
2
0
100
1
200 °C
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Ω
103
5
4
3
2
3
4 5
10
2
mV/°C
25
Δ VZ
ΔTj
47 + 51
43
39
36
100 V
3 4 5
VZ
Figure 5. Dynamic Resistance vs. Zener Voltage
Tj = 25 °C
7
2
18122
Tamb
18115
rzj
Tj = 25 °C
IZ = 5 mA
1
0
20
IZ =
15
5 mA
1 mA
20 mA
10
102
7
5
4
3
5
0
2
10
0.1
18120
-5
2
3
4 5
1
2
3 4 5
10 mA
IZ
Figure 3. Dynamic Resistance vs. Zener Current
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4
1
18123
2
3
4 5
10
2
3 4 5
100 V
VZ
Figure 6. Temperature Dependence of Zener Voltage vs. Zener
Voltage
Document Number 85759
Rev. 1.5, 24-Mar-06
AZ23-V-Series
Vishay Semiconductors
V
0.8
V
1.6
25
0.7
15
VZ at IZ = 5 mA
10
0.6
Δ VZ
1.2
Δ VZ
0.5
8
0.4
0.2
6.2
5.9
0.1
5.6
0
0.6
0.4
0.2
0
5.1
-1
- 0.2
4.7
3.6
- 0.2
0
20
40
60
- 0.4
100 120 140 C
80
18124
18127
1
2
3
10
4 5
2
3 4 5
100 V
VZ at IZ = 5 mA
Tj
Figure 7. Change of Zener Voltage vs. Junction Temperature
Figure 10. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
mV/°C
100
V
5
IZ = 5 mA
ΔVZ = rzth x IZ
4
80
Δ VZ
60
3
40
2
20
1
0
IZ = 5 mA
IZ = 2 mA
0
0
20
40
60
80
0
100 V
VZ
18125
20
40
60
100 V
80
VZ
18128
Figure 8. Temperature Dependence of Zener Voltage vs. Zener
Voltage
Figure 11. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
V
9
mA
50
Tj = 25 °C
8
7
Δ VZ
1
0.8
7
0.3
Δ VZ
ΔTj
ΔVZ = rzth x IZ
1.4
2.7
6.8
lz
51
5
5.6
4.7
3.3
40
6
3.9
43
8.2
30
4
36
3
20
2
1
Test Current IZ
5 mA
10
0
IZ = 2 mA
-1
0
20
40
18126
60
80 100 120
140 °C
Tj
Figure 9. Change of Zener Voltage vs. Junction Temperature
Document Number 85759
Rev. 1.5, 24-Mar-06
0
0
18111
1
2
3
4
5
6
7
8
9
10 V
VZ
Figure 12. Breakdown Characteristics
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5
AZ23-V-Series
Vishay Semiconductors
mA
30
mA
10
10
Tj = 25 °C
Tj = 25 °C
12
8
lz
lz
15
20
18
39
51
43
47
Test Current IZ
5 mA
6
22
4
27
10
33
Test Current IZ
5 mA
36
2
0
0
0
10
20
18112
30
40 V
0
VZ
10
20
30
Figure 13. Breakdown Characteristics
40
50
60
70
80
90
100 V
VZ
18113
Figure 14. Breakdown Characteristics
Layout for RthJA test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
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6
17451
Document Number 85759
Rev. 1.5, 24-Mar-06
AZ23-V-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
17418
Document Number 85759
Rev. 1.5, 24-Mar-06
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7
AZ23-V-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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8
Document Number 85759
Rev. 1.5, 24-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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