Comchip B10S-G Smd general purpose bridge rectifier diode Datasheet

SMD General Purpose Bridge Rectifier Diode
B05S-G Thru B10S-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 0.8 A
RoHS Device
Features
MBS
-Rating to 1000V PRV.
0.031 (0.80)
0.019 (0.50)
-Ideal for printed circuit board.
+
-
-Reliable low cost construction utilizing
molded plastic technique results in
inexpensive product.
0.165 (4.20)
0.150 (3.80)
XXX
-Pb free product.
0.014 (0.35)
0.006 (0.15)
0.106 (2.70)
0.090 (2.30)
0.275 (7.0) max
Mechanical data
-Polarity: Symbol molded on body.
0.008 (0.20)max
-Weight: 0.125 grams.
-Mounting position: Any.
0.193 (4.90)
0.177 (4.50)
0.106 (2.70)
0.090 (2.30)
Dimensions in inches and (millimeter)
Maximum Rating And Electrical Characteristics
Rating at TA=25°C, unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol B05S-G
B1S-G
B2S-G
B4S-G
B6S-G
B8S-G
B10S-G
B1S
B2S
B4S
B6S
B8S
B10S
Unit
Parameter
Marking
B05S
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified
Current (Note 1)
@TA=40°C
I(AV)
0.8
A
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load
(JEDEC Method)
IFSM
30
A
Maximum Forward Voltage at 0.8A DC
VF
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
IR
5.0
500
μA
CJ
15
pF
RθJA
75
°C/W
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
@TJ=25°C
@TJ=125°C
Typical Junction Capacitance
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Notes: 1. Mounted on P.C. Board.
2. Measured at 1MHz and applied reverse voltage of 4V DC.
3. Thermal resistance: Junction to Ambient.
REV:D
Page 1
QW-BBR01
Comchip Technology CO., LTD.
SMD General Purpose Bridge Rectifier Diode
RATING AND CHARACTERISTIC CURVES (B05S-G thru B10S-G)
Fig.1 - Forward Current Derating Curve
Fig.2 - Maximum Non-Repetitive
Surge Current
40
Peak Forward Surge Current, (A)
Average Forward Current, (A)
1.0
0.8
0.6
0.4
Mounted on PC board,
single phase half wave 60Hz
resistive or inductive load
0.2
0.1
20
40
60
80
100
120
140
20
10
Pulse width 8.3mS,
single half-sine wave
(JEDEC Method)
0
160
1
10
100
Ambient temperature, (°C)
Number of Cycles at 60Hz
Fig.3 - Typical Reverse Characteristics
Fig.4 - Typical Forward Characteristics
100
10
I
nstantaneous
Forward Current, (A)
Instantaneous Reverse Current, (µA)
30
TJ=125°C
10
1.0
TJ=25°C
0.1
0.01
0
20
40
60
80
100
120
140
1.0
0.1
TJ=25°C
Pulse Width=300μS
0.01
0
Percent of Rated Peak Reverse Voltage, (%)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage, (V)
Fig.5 - Typical Junction Capacitance
Capacitance, (pF)
100
10
TJ=25°C
f=1MHz
1.0
1
10
100
Reverse Voltage, (V)
REV:D
Page 2
QW-BBR01
Comchip Technology CO., LTD.
SMD General Purpose Bridge Rectifier Diode
Reel Taping Specification
d
P0
P1
Index hole
-
+
XXX
T
E
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
MBS
MBS
SYMBOL
A
B
C
d
D
D1
D2
(mm)
4.90 ± 0.10
7.24 ± 0.10
3.33 ± 0.10
1.55 ± 0.05
330
50.0 MIN.
13.00 ± 0.20
(inch)
0.193 ± 0.004
0.285 ± 0.004
0.131 ± 0.004
0.061 ± 0.002
13
1.969 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
5.50 ± 0.05
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.30
12.00 ± 0.30
12.00~14.40
(inch)
0.069 ± 0.004
0.217 ± 0.002
0.315 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.012
0.472 ± 0.012
0.472~0.657
REV:D
Page 3
QW-BBR01
Comchip Technology CO., LTD.
SMD General Purpose Bridge Rectifier Diode
Suggested PAD Layout
A
MBS
SIZE
(mm)
(inch)
A
0.82MIN
0.032MIN
B
2.55REF
0.100REF
C
0.92MIN
0.036MIN
D
7.00MAX
0.276MAX
D
C
B
Standard Packaging
REEL PACK
Case Type
MBS
REEL
Reel Size
( pcs )
(inch)
3,000
13
REV:D
Page 4
QW-BBR01
Comchip Technology CO., LTD.
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