Littelfuse B1201UAL Single port negative slic protector Datasheet

Battrax® Single Port Negative SLIC Protector
RoHS
This programmable Battrax device is referenced to a negative voltage source. This
dual-chip package includes internal diodes for transient protection from positive surge
events.
(G)
5
2
3
(-VREF)
(R)
SIDACtor Devices
1
(T)
For a diagram of a Battrax application, see Figure 6.47 in Section 6, “Reference
Designs” of this Telecom Design Guide.
Electrical Parameters
Part
Number *
VDRM
Volts
VS
Volts
VT
Volts
VF
Volts
IDRM
µAmps
IGT
mAmps
IT
Amps
IH
mAmps
100
B1101U_L
|-VREF| + |-1.2V|
|-VREF| + |-10V|
4
5
5
100
2.2
B1161U_L
|-VREF| + |-1.2V|
|-VREF| + |-10V|
4
5
5
100
2.2
160
B1201U_L
|-VREF| + |-1.2V|
|-VREF| + |-10V|
4
5
5
100
2.2
200
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For individual “UA” and “UC” surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.
• IPP is a repetitive surge rating and is guaranteed for the life of the product.
• IPP ratings assume a VREF = -48 V.
• VDRM is measured at IDRM.
• VS is measured at 100 V/µs.
• VREF maximum value for the B1101, B1161, and/or B1201 is -200 V.
Surge Ratings in Amps
Series
IPP
0.2x310 * 2x10 *
8x20 *
0.5x700 ** 2x10 ** 1.2x50 **
10x160 *
10x160 **
10x560 *
10x560 **
5x320 *
9x720 **
Amps
Amps
Amps
10x360 * 10x1000 * 5x310 *
ITSM
10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
Amps
Amps
Amps
Amps
A
20
150
150
90
50
75
75
C
50
500
400
200
150
200
175
Amps
di/dt
Amps
Amps
Amps/µs
45
75
20
500
100
200
50
500
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 77
www.littelfuse.com
Battrax® Single Port Negative SLIC Protector
Thermal Considerations
Package
Symbol
Modified MS-013
TJ
Operating Junction Temperature Range
-40 to +125
°C
TS
Storage Temperature Range
-65 to +150
°C
60
°C/W
6
5
4
Parameter
Value
Thermal Resistance: Junction to Ambient
RθJA
Unit
1
2
3
Capacitance Values
pF
Part Number
B1101UAL
B1101UCL
B1161UAL
B1161UCL
B1201UAL
B1201UCL
MIN
50
50
50
50
50
50
MAX
200
200
200
200
200
200
Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias.
IPP – Peak Pulse Current – %IPP
+I
VF
VS VDRM
VT
-V
IDRM
+V
IH
IGT
IT
100
50
0
tr
td
t – Time (µs)
10
IH
8
6
25 ˚C
4
2
IH (TC = 25 ˚C)
tr x td Pulse Waveform
Ratio of
Percent of VS Change – %
Half Value
0
14
12
0
-4
2.0
1.8
1.6
1.4
25 ˚C
1.2
1.0
0.8
0.6
0.4
-40 -20 0
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Normalized VS Change versus Junction Temperature
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
Junction Temperature (TJ) – ˚C
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tr = rise time to peak value
td = decay time to half value
Waveform = tr x td
-I
V-I Characteristics
Peak
Value
Normalized DC Holding Current versus Case Temperature
3 - 78
© 2006 Littelfuse • Telecom Design Guide
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