Vishay B125C800DM Glass passivated ultrafast bridge rectifier Datasheet

B40C800DM thru B380C800DM
Vishay General Semiconductor
Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• UL Recognition, file number E54214
• Ideal for automated placement
• High surge current capability
• Solder Dip 260 °C, 40 seconds
~
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
~
~
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, Lighting Ballaster, Adapter,
Battery Charger, Home Appliances, Office Equipment,
and Telecommunication applications.
~
Case Style DFM
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
0.9 A
VRRM
65 V to 600 V
IFSM
45 A
IR
10 µA
VF
1.0 V
Tj max.
125 °C
MECHANICAL DATA
Case: DFM
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS input voltage R + C-load
Maximum average forward output current
for free air operation at TA = 45 °C
R + L-load
C-load
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
VRRM
65
125
200
400
600
V
VRMS
40
80
125
250
380
V
0.9
0.8
IF(AV)
A
Maximum DC blocking voltage
VDC
65
125
200
400
600
V
Maximum peak working voltage
VRWM
90
180
300
600
900
V
100
200
350
650
1000
Maximum non-repetitive peak voltage
VRSM
Maximum repetitive peak forward surge current
IFRM
10
Peak forward surge current single sine wave on rated load
IFSM
45
A
I2t
10
A2sec
Rating for fusing at Tj = 125 °C (t < 100 ms)
Minimum series resistor C-load at VRMS = ± 10 %
Maximum load capacitance
Operating junction temperature range
Storage temperature range
Document Number 88533
09-Oct-06
+ 50 %
- 10 %
V
A
RT
1.0
2.0
4.0
8.0
12
Ω
CL
5000
2500
1000
500
200
µF
TJ
- 40 to + 125
°C
TSTG
- 40 to + 150
°C
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B40C800DM thru B380C800DM
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage drop per diode
SYMBOL
at 0.9 A
Maximum reverse current at rated
repetitive peak voltage per diode
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
VF
1.0
V
IR
10
µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
RθJA
RθJL
Typical thermal resistance (1)
B250
C800DM
B380
C800DM
40
15
UNIT
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
B38C800DM-E3/45
0.416
45
50
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.0
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0.6
0 - 10 µF
10 - 100 µF
> 100 µF
0.4
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0.2
Average Forward Output Current (A)
Average Forward Output Current (A)
1.0
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0 - 10 µF
10 - 100 µF
> 100 µF
0.6
0.4
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0.2
0
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Ambient Temperature (°C)
Ambient Temperature (°C)
Figure 1. Derating Curves Output Rectified Current for
B40C800D...B125C800DM
Figure 2. Derating Curves Output Rectified Current for
B250C800D...B360C800DM
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Document Number 88533
09-Oct-06
B40C800DM thru B380C800DM
Vishay General Semiconductor
10
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
50
1.0 Cycle
40
Tj = 125 °C
10 ms Single Sine-Wave
30
20
10
0
Tj = 100 °C
1
0.1
Tj = 25 °C
0.01
0
100
10
0
60
40
80
100
Figure 5. Typical Reverse Leakage Characteristics Per Diode
100
10
Tj = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Junction Capacitance (pF)
Instantaneous Forward Surge Current (A)
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
0.1
0.01
0.4
20
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 50 Hz
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.6
0.8
1.0
1.2
1.4
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Figure 4. Typical Forward Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.130 (3.3)
0.120 (3.05)
0.080 (2.03)
0.050 (1.27)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.185 (4.69)
0.150 (3.81)
0.205 (5.2)
0.195 (5.0)
Document Number 88533
09-Oct-06
0.075 (1.90)
0.055 (1.39)
0.013 (3.3)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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