ETC B12V10592 Npn low noise silicon microwave transistor Datasheet

BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Gain Bandwidth Product
f = 10 GHz typ @ I C = 10 mA
t
•
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V105 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
B12V105 an excellent choice for battery applications. From
10 mA to greater than 25 mA, ft is nominally 10 GHz.
Maximum recommended continuous current is 40 mA. A
broad range of packages are offered including SOT-23, SOT143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and
unencapsulated dice.
Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
• High Gain
|S21| 2 = 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
•
Absolute Maximum Ratings:
SYMBOL
Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
•
Electrical Characteristics (TA = 25oC)
SYMBOL
PARAMETERS
VCBO
Collector-Base Voltage
VCEO
VEBO
IC CONT
T
J
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
PARAMETERS & CONDITIONS
UNIT
MIN.
RATING
UNITS
20
V
12
1.5
40
200
-65 to 150
V
V
mA
o
C
o
C
TYP.
MAX.
VCE =8V, I C = 10 mA unless stated
f
t
Gain Bandwidth Product
GHz
10
|S 21 | 2
Insertion Power Gain:
P1d B
Power output at 1dB compression:
f = 1.0 GHz
dBm
12
G1d B
Gain at 1dB compression:
f = 1.0 GHz
dBm
15
NF
Noise Figure: VCE =8V, I C = 2mA
f = 1.0 GHz
ZS = 50Ω
dB
1.6
hFE
Forward Current Transfer Ratio:
VCE = 8V, IC = 10 mA
f = 1MHz
ICBO
IEBO
C CB
f = 1.0 GHz, I C = 10 mA
I C = 25 mA
f = 2.0 GHz, I C = 10 mA
IC = 25 mA
Collector Cutoff Current
: VCB =8V
Emitter Cutoff Current : VEB =1V
Collector Base Capacitance: VCB = 8V
f = 1MHz
17.5
18.1
12.8
12.6
50
100
250
µA
0.2
µA
1.0
pF
0.11
PAGE 2
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
BIAS CONDITION:
S-MATRIX:
V CE =
5
V,
IC =
Z S = 50.0 + J 0.0
2 mA
Z L = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35)
FREQ.
S11
S21
S12
S22
S21
GHz
dB
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
Mag
0.8709
0.8511
0.8128
0.7762
0.7244
0.6760
0.6309
0.5888
0.5754
0.5623
0.5370
0.5248
0.5370
0.5128
0.5069
0.4954
0.5011
0.5128
0.5432
0.5308
0.5188
Ang
-19
-32
-45
-55
-68
-80
-100
-114
-124
-137
-144
-165
-174
178
173
166
162
153
152
152
144
5.888
4.623
4.027
3.388
3.273
3.162
3.235
3.019
2.786
2.722
2.691
2.317
2.264
2.187
1.949
1.883
1.737
1.717
1.566
1.479
1.445
Mag
Ang
172
157
142
137
126
122
116
106
102
88
82
86
84
78
78
73
70
69
63
64
58
0.0316
0.0478
0.0660
0.0776
0.0876
0.0933
0.1035
0.1071
0.1096
0.1148
0.1174
0.1188
0.1216
0.1244
0.1258
0.1303
0.1333
0.1348
0.1333
0.1348
0.1380
Mag
Ang
80
76
61
59
53
51
48
47
46
46
45
46
48
49
50
51
53
55
57
60
61
0.9549
0.9120
0.8511
0.8511
0.7161
0.6998
0.6531
0.6165
0.6456
0.6025
0.5888
0.5370
0.5308
0.5188
0.4897
0.5011
0.4677
0.4773
0.4773
0.4677
0.5069
Mag
Ang
-10
-17
-25
-32
-34
-37
-47
-49
-51
-54
-57
-63
-64
-70
-72
-78
-81
-87
-96
-93
-102
15.4
13.3
12.1
10.6
10.3
10.0
10.2
9.6
8.9
8.7
8.6
7.3
7.1
6.8
5.8
5.5
4.8
4.7
3.9
3.4
3.2
PAGE 3
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
BIAS CONDITION:
S-MATRIX:
V CE =
5
V,
IC =
Z S = 50.0 + J 0.0
5 mA
Z L = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
FREQ.
S11
S21
S12
S22
S21
GHz
dB
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
Mag
0.7762
0.7885
0.6382
0.6165
0.5248
0.4677
0.4168
0.3672
0.3548
0.3467
0.3548
0.3235
0.3672
0.3801
0.3935
0.4120
0.4216
0.4786
0.4731
0.4841
0.5495
Ang
-24
-44
-60
-72
-88
-102
-124
-138
-146
-158
-176
171
163
157
153
146
142
135
132
131
128
12.02
10.47
8.810
7.244
6.456
6.025
5.188
4.677
4.168
3.901
3.801
3.388
3.273
3.019
2.818
2.722
2.570
2.511
2.290
2.187
2.162
Mag
Ang
151
134
106
80
72
57
44
30
20
9
-4
-17
-27
-39
-49
-60
-70
-82
-92
-101
-112
0.0223
0.0398
0.0512
0.0568
0.0616
0.0691
0.0776
0.0822
0.0860
0.0954
0.1047
0.1071
0.1122
0.1174
0.1230
0.1318
0.1348
0.1380
0.1412
0.1445
0.1548
Mag
Ang
74
72
60
59
57
57
57
57
58
59
60
62
63
63
64
65
65
67
69
70
68
0.9225
0.8709
0.7413
0.7079
0.6095
0.5559
0.5495
0.5128
0.5069
0.4677
0.4570
0.4216
0.4315
0.4265
0.4168
0.4073
0.3890
0.3890
0.3981
0.3870
0.3801
Mag
Ang
-14
-25
-31
-36
-38
-40
-48
-46
-50
-52
-58
-60
-62
-67
-70
-75
-79
-83
-86
-88
-99
21.6
20.4
18.9
17.2
16.2
15.6
14.3
13.4
12.4
12.0
11.6
10.6
10.3
9.6
9.0
8.7
8.2
8.0
7.2
6.8
6.7
PAGE 4
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S PARAMETERS:
BIAS CONDITION:
S-MATRIX:
V CE =
8 V,
IC =
Z S = 50.0 + J 0.0
10 mA
Z L = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
FREQ.
S11
S21
S12
S22
S21
GHz
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
dB
0.6025
0.5888
0.4954
0.4786
0.4265
0.4027
0.4027
0.3935
0.3890
0.3890
0.4216
0.4168
0.4623
0.4786
0.4897
0.4841
0.4954
0.5495
0.5754
0.5821
0.5888
-46
-78
-109
-122
-136
-151
-168
-180
176
170
158
149
145
140
138
133
128
123
121
120
117
15.84
14.12
11.09
9.332
7.498
6.456
6.025
5.308
4.897
4.518
4.365
3.890
3.715
3.388
3.198
3.019
2.818
2.660
2.371
2.137
2.018
160
144
124
118
109
102
99
94
90
85
82
79
77
74
74
71
67
66
62
62
58
0.0177
0.0301
0.0407
0.0457
0.0506
0.0537
0.0616
0.0676
0.0707
0.0741
0.0803
0.0812
0.0912
0.0933
0.1000
0.1059
0.1011
0.1188
0.1188
0.1230
0.1318
70
65
56
58
58
60
62
62
64
66
65
67
69
68
71
70
72
72
72
76
74
0.8912
0.7762
0.6309
0.6095
0.5128
0.5248
0.4677
0.4315
0.4415
0.4027
0.4120
0.3758
0.3845
0.3672
0.3758
0.3880
0.3630
0.3935
0.3548
0.3890
0.3548
-17
-30
-36
-40
-39
-42
-49
-50
-52
-53
-58
-62
-64
-70
-71
-76
-75
-84
-90
-86
-94
24.0
23.0
20.9
19.4
17.5
16.2
15.6
14.5
13.8
13.1
12.8
11.8
11.4
10.6
10.1
9.6
9.0
8.5
7.5
6.6
6.1
PAGE 5
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
TYPICAL S
BIAS CONDITION:
S-MATRIX:
PARAMETERS:
V CE =
8 V,
IC =
Z S = 50.0 + J 0.0
25 mA
Z L = 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
FREQ.
S11
S21
S12
S22
S21
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
dB
0.20000
0.40000
0.60000
0.80000
1.00000
1.20000
1.40000
1.60000
1.80000
2.00000
2.20000
2.40000
2.60000
2.80000
3.00000
3.20000
3.40000
3.60000
3.80000
4.00000
4.20000
0.4466
0.4265
0.3715
0.3672
0.3467
0.3019
0.3311
0.3801
0.4027
0.4120
0.4365
0.4315
0.4731
0.4897
0.4786
0.4954
0.5308
0.5559
0.5432
0.5370
0.5623
-55
-98
-127
-140
-145
-158
-165
-172
-176
168
157
149
146
141
141
137
134
128
128
129
125
17.78
14.62
12.44
9.855
8.035
7.244
6.025
5.308
4.677
4.265
4.027
3.672
3.467
3.235
3.019
2.804
2.732
2.630
2.398
2.364
2.137
154
136
116
105
102
96
93
88
86
84
80
77
76
73
73
70
68
65
64
64
61
0.0149
0.0234
0.0301
0.0342
0.0407
0.0467
0.0543
0.0638
0.0645
0.0699
0.0785
0.0915
0.0891
0.0933
0.1000
0.1071
0.1109
0.1202
0.1206
0.1258
0.1348
56
62
64
68
69
71
72
72
74
76
77
77
78
78
80
80
79
80
79
81
80
0.7585
0.6456
0.5069
0.5011
0.4466
0.4786
0.4027
0.3715
0.3630
0.3630
0.3548
0.3273
0.3235
0.3162
0.3198
0.3198
0.2951
0.3162
0.2851
0.3162
0.3162
-22
-34
-33
-36
-33
-34
-43
-41
-46
-47
-53
-57
-61
-67
-69
-74
-76
-82
-94
-91
-90
25.0
23.3
21.9
19.9
18.1
17.2
15.6
14.5
13.4
12.6
12.1
11.3
10.8
10.2
9.6
9.2
8.7
8.4
7.6
7.1
6.6
PAGE 6
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
04 Package: 0.145" Plastic Macro-X
86 Package: 0.085" Plastic Micro-X,
Surface Mount
0.02
.51
1
2
4
0.032+0.015
2.34+0.38
0.106+0.015
2.67+0.38
3
.020+.010
0.51+.25
0.008+0.002
0.203+0.051
0.026+0.001
0.66+0.13
0.085+0.005
2.16+0.13
85 Package: 0.085" Plastic Micro-X
87 Package: 0.085" Plastic Micro-X,
Short Lead
.020
.51
4
1
3
2
.60+0.10
1.52+.26
.065
2.15
.008+.002
.20+.050
5
.020
.51
.215+.010
5.46+.25
0.060+0.01
1.52+0.25
PAGE 7
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
02 Package: SOT-23
02J Package: SOT-23J
0.30
0.51
1.39
1.57
0.45
0.60
2.25
2.75
0.95
1.90
2.65
3.04
0.00
0.10
0.79
1.1
0.10
0.45
0.60
14 Package: SOT-143
92 Package: TO-92
PAGE 8
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
ORDERING INFORMATION:
P/N Including Pkg
85 Package: Micro-X 0.085" Ceramic
Temp Range/App
B12V105 00
B12V105 02
B12V105 14
B12V105 35
B12V105 92
-55 to +125˚C
-40 to +85˚C
-40 to +85˚C
-55 to +125˚C
-40 to +85˚C
NOTES: (unless otherwise specified)
in
1. Dimensions are (mm)
2. Tolerances:
in .xxx = ± .005
mm .xx = ± .13
3. All dimensions nominal; subject to change
without notice
LEAD
14, 85, 86, 87, 35
& 04 Packages
1
Base
2
Emitter
3
4
Collector
Emitter
BIPOLARICS, INC.
46766 Lakeview Blvd.
Fremont, CA 94538
Phone: (510) 226-6565 FAX: (510) 226-6765
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