Vishay B150-E3/6AT Surface mount schottky barrier rectifier Datasheet

B120 thru B160
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Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V to 60 V
IFSM
30 A
VF
0.52 V, 0.75 V
TJ max.
125 °C, 150 °C
Note
• These devices are not AEC-Q101 qualified
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
B120
B130
B140
B150
B160
B12
B13
B14
B15
B16
20
30
40
50
60
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
Revision: 27-Mar-12
dV/dt
TJ
TSTG
10 000
- 65 to + 125
- 65 to + 150
V
V/μs
- 65 to + 150
°C
°C
Document Number: 88946
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B120 thru B160
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
1.0 A
SYMBOL
B120
B130
VF (1)
TA = 25 °C
Maximum reverse current at rated VR
TA = 100 °C
B140
B150
0.52
B160
0.75
V
0.2
IR (2)
6.0
UNIT
mA
5.0
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
B120
B130
B140
RJA (1)
95
RJL (1)
30
B150
B160
UNIT
°C/W
Note
(1) P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
B140-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
B140-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
0.8
Resistive or Inductive Load
B120 thru B140
B150 and B160
0.8
B120 thru B140
0.6
0.4
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.2
D = 0.8
0.7
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
D = 0.5
0.6
D = 0.3
0.5
D = 1.0
D = 0.2
D = 0.1
0.4
0.3
T
0.2
0.1
0
D = tp/T
tp
0.8
1.0
0
0
25
50
75
100
125
150
0
0.2
0.4
0.6
1.2
Lead Temperature (°C)
Average Forward Current
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 27-Mar-12
Document Number: 88946
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B120 thru B160
www.vishay.com
Vishay General Semiconductor
0.8
10
D = 0.8
0.7
Average Power Loss (W)
Instantaneous Forward Current (A)
B150 and B160
D = 0.5
0.6
D = 0.3
0.5
D = 1.0
D = 0.2
D = 0.1
0.4
0.3
T
0.2
0.1
D = tp/T
tp
TJ = 125 °C
1
TJ = 25 °C
0.1
B150 and B160
0.01
0
0
0.2
0.4
0.6
0.8
1.0
0
1.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Typical Instantaneous Forward Characteristics
100 000
Instantaneous Reverse Current (μA)
40
Peak Forward Surge Current (A)
TJ = 150 °C
30
20
10
B120 thru B140
B150 and B160
TJ = 150 °C
10 000
1000
100
TJ = 125 °C
TJ = 25 °C
10
1
0.1
0
1
10
100
10
20
30
40
50
60
70
80
90
100
Number of Cycles at 50 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Leakage Characteristics
TJ = 150 °C
1000
TJ = 125 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
1
TJ = 25 °C
0.1
B120 thru B140
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
B120 thru B140
B150 and B160
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 8 - Typical Junction Capacitance
Revision: 27-Mar-12
Document Number: 88946
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B120 thru B160
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 27-Mar-12
Document Number: 88946
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12
1
Document Number: 91000
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