Diodes B1x-13-F 1.0a high voltage schottky barrier rectifier Datasheet

B170/B - B1100/B
Green
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Mechanical Data
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Guard Ring Die Construction for Transient Protection
Ideally Suited for Automated Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
High Temperature Soldering: 260°C/10 Second at Terminal
Lead Free Finish/RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
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Top View
Case: SMA / SMB
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Weight: SMA 0.064 grams (approximate)
SMB 0.093 grams (approximate)
Bottom View
Ordering Information (Note 3)
Part Number
B1x-13-F
B1xB-13-F
Case
SMA
SMB
Packaging
5000/Tape & Reel
3000/Tape & Reel
*x = Device type, e.g. B180-13-F (SMA package); B1100B-13-F (SMB package).
Notes:
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YWW
xxx(x)
B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
XXX = Product type marking code, ex: B170 (SMA package)
XXXX = Product type marking code, ex: B190B (SMB package)
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 2 for 2002)
WW = Week code 01 to 52
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© Diodes Incorporated
B170/B - B1100/B
Maximum Ratings
@TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Reverse Current
B170/B
B180/B
B190/B
B1100/B
Unit
70
80
90
100
V
49
56
63
70
1.0
V
A
IFSM
30
A
IRRM
1.0
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
RθJT
TJ, TSTG
B170/B
B180/B
B190/B
25
-65 to +150
Unit
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Forward Voltage Drop
VF
-
-
Leakage Current (Note 5)
IR
Total Capacitance
CT
-
-
Max
0.79
0.69
0.5
5.0
80
Unit
V
mA
pF
Test Condition
IF = 1.0A, TA = 25°C
IF = 1.0A, TA = 100°C
@ Rated VR, TA = 25°C
@ Rated VR, TA = 100°C
VR = 4V, f = 1MHz
4. Valid provided that terminals are kept at ambient temperature.
5. Short duration pulse test used to minimize self-heating effect.
1,000
10
CT, TOTAL CAPACITANCE (pF)
IF, INSTANTANEOUS FORWARD CURRENT (A)
Notes:
B1100/B
1.0
0.1
100
TJ = 25°C
IF Pulse Width = 300µs
0.01
0
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
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10
0.1
1
10
100
VR, DC REVERSE VOLTAGE (V)
Fig. 2 Total Capacitance vs. Reverse Voltage
September 2010
© Diodes Incorporated
B170/B - B1100/B
40
IFSM, PEAK FORWARD SURGE CURRENT (A)
IF(AV), AVERAGE FORWARD CURRENT (A)
1.0
0.5
0
25
50
75
100
125
TT, TERMINAL TEMPERATURE (°C)
Fig. 3 Forward Current Derating Curve
Single Half Sine-Wave
30
20
10
TJ = 150°C
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Forward Surge Current
150
Package Outline Dimensions
B
A
C
D
J
H
SMA
Dim
Min
Max
A
2.29
2.92
B
4.00
4.60
C
1.27
1.63
D
0.15
0.31
E
4.80
5.59
G
0.05
0.20
H
0.76
1.52
J
2.01
2.30
All Dimensions in mm
SMB
Dim
Min
Max
A
3.30
3.94
B
4.06
4.57
C
1.96
2.21
D
0.15
0.31
E
5.00
5.59
G
0.05
0.20
H
0.76
1.52
J
2.00
2.50
All Dimensions in mm
G
E
Suggested Pad Layout
SMA
Value (in mm)
Dimensions
Z
6.5
G
1.5
X
1.7
Y
C
B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
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2.5
4.0
SMB
Value (in mm)
Dimensions
Z
6.7
G
1.8
X
2.3
2.5
Y
4.3
C
September 2010
© Diodes Incorporated
B170/B - B1100/B
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Copyright © 2010, Diodes Incorporated
www.diodes.com
B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
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© Diodes Incorporated
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