Siemens BA586 Silicon pin diode Datasheet

BA 586
Silicon PIN Diode
BA 586
Preliminary Data
●
Current-controlled RF resistor for
switching and attenuating applications.
●
Frequency range above 1 MHz
●
Designed for low IM distortion
Type
Marking
Ordering Code
(tape and reel)
BA 586
white P
Q62702-A930
Pin Configuration
Package1)
SOD-123
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Operating temperature range
Top
– 55 … + 125 ˚C
Storage temperature range
Tstg
– 55 … + 150
Rth JA
≤
Thermal Resistance
Junction - ambient
1)
For detailed information see chapter Package Outlines.
450
K/W
BA 586
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Forward voltage
IF = 50 mA
VF
–
–
1.15
V
Reverse current
VR = 50 V
IR
–
–
50
nA
Diode capacitance
f = 1 MHz, VR = 50 V
f= 100 MHz, VR = 0 V
CT
–
–
0.23
0.2
0.35
–
Forward resistance
f = 100 MHz
IF = 10 µA
IF = 1 mA
IF = 10 mA
rf
Zero bias conductance
f = 100 MHz, VR = 0 V
Series inductance
Diode capacitance CT = f (VR)
f = 1 MHz / f = 100 MHz
pF
Ω
–
–
6.5
2400
58
7.8
–
–
10
gp
–
40
–
µS
LS
–
2
–
nH
Forward resistance rf = f (IF)
f = 100 MHz
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