Vishay BA783-V Band switching diode Datasheet

BA782-V, BA783-V
Vishay Semiconductors
Band Switching Diodes
FEATURES
• These diodes are also available in SOD-323
case with the type designations BA782S-V and
BA783S-V
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17431
MECHANICAL DATA
Case: SOD-123
DESCRIPTION
Weight: approx. 10.3 mg
Silicon epitaxial planar diode switches
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
REMARKS
BA782-V
BA782-V-GS18 or BA782-V-GS08
R2
Tape and reel
BA783-V
BA783-V-GS18 or BA783-V-GS08
R3
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITIONS
VR
35
UNIT
V
Forward continuous current
IF
100
mA
SYMBOL
VALUE
UNIT
Tj
125
°C
Tstg
- 55 to + 150
°C
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
IR
50
nA
f = 1 MHz, VR = 1 V
CD1
1.5
pF
BA782-V
CD2
1.25
pF
BA783-V
CD2
1.2
pF
BA782-V
rf1
0.7
Ω
BA783-V
rf1
1.2
Ω
BA782-V
rf2
0.5
Ω
Diode capacitance
f = 1 MHz, VR = 3 V
f = (50 to 1000) MHz, IF = 3 mA
Dynamic forward resistance
f = (50 to 1000) MHz, IF = 10 mA
Series inductance across case
Document Number: 85708
Rev. 1.4, 05-Aug-10
BA783-V
rf2
LS
0.9
2.5
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Ω
nH
www.vishay.com
1
BA782-V, BA783-V
Band Switching Diodes
Vishay Semiconductors
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
1.8
rf - Dynamic Forward Resistance (Ω)
CD - Diode Capacitance (pF)
2.0
Tj = 25 °C
f = 1 MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18798
1
10
BA783-V
100 MHz
1
BA782-V
100 MHz
0.1
100
10
BA782-V, BA783-V
1 kHz
Tamb = 25 °C
1
VR - Reverse Voltage (V)
10
18799
Fig. 1 - Diode Capacitance
100
IF - Forward Current (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Document Number: 85708
Rev. 1.4, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
2
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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