INFINEON BA892

BA592/BA892...
Silicon RF Switching Diode
• For band switching in TV/VTR tuners
and mobile applications
• Very low forward resistance (typ. 0.45 Ω @ 3 mA)
• Small capacitance
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BA592
BA892/-02L
BA892-02V
Type
BA592
BA892
BA892-02L
BA892-02V
Package
SOD323
SCD80
TSLP-2-1
SC79
Configuration
single
single
single, leadless
single
LS(nH)
1.8
0.6
0.4
0.6
Marking
blue S
AA
AA
A
Maximum Ratings at T A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
35
V
Forward current
IF
100
mA
Junction temperature
TJ
150
°C
Operating temperature range
Top
-55 ... 125
Storage temperature
TStg
-55 ... 150
1
Value
Unit
2011-07-21
BA592/BA892...
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
K/W
BA592
≤ 135
BA892, BA892-02V
≤ 120
BA892-02L
≤ 70
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
20
nA
VF
-
-
1
V
DC Characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
1For
calculation of RthJA please refer to Application Note Thermal Resistance
2
2011-07-21
BA592/BA892...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
0.65
0.92
1.4
VR = 3 V, f = 1 MHz
0.6
0.85
1.1
-
1
-
-
100
-
VR = 0 V, f = 100 MHz
Reverse parallel resistance
RP
kΩ
VR = 0 V, f = 100 MHz
Forward resistance
Ω
rf
IF = 3 mA, f = 100 MHz
-
0.45
0.7
IF = 10 mA, f = 100 MHz
-
0.36
0.5
τ rr
-
120
-
ns
I-region width
WI
-
3
-
µm
Insertion loss1)
IL
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3mA,
RL = 100 Ω
dB
IF = 0.1 mA, f = 1.8 GHz
-
0.1
-
IF = 3 mA, f = 1.8 GHz
-
0.5
-
IF = 10 mA, f = 1.8 GHz
-
0.4
-
VR = 0 V, f = 100 MHz
-
23.5
-
VR = 0 V, f = 470 MHz
-
10.5
-
VR = 0 V, f = 1 GHz
-
5.5
-
Isolation1)
1BA892-02L
ISO
in series configuration, Z = 50Ω
3
2011-07-21
BA592/BA892...
Diode capacitance CT = ƒ (VR)
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
f = Parameter
10 3
2
KOhm
100 MHz
pF
Rp
CT
10 2
1.2
10 1
1 GHz
1 MHz ... 1 GHz
0.8
10 0
0.4
0
0
5
10
15
V
20
10 -1
0
30
5
10
15
20
V
30
VR
VR
Forward resistance rf = ƒ (IF)
Forward current IF = ƒ (VF)
f = 100MHz
TA = Parameter
10 2
10 0
A
Ohm
10 -1
10 1
rf
IF
10 -2
10 -3
10
0
10
-40 °C
25 °C
85 °C
125 °C
-4
10 -5
10 -1 -2
10
10
-1
10
0
10
1
mA 10
10 -6
0
2
IF
0.2
0.4
0.6
0.8
V
1.2
VF
4
2011-07-21
BA592/BA892...
Insertion loss IL = -|S21|2 = ƒ(f)
Isolation ISO = -|S21 |2 = ƒ(f)
IF = Parameter
VR = Paramter
BA892-02L in series configuration, Z = 50Ω
BA892-02L in series configuration, Z = 50Ω
0
0
dB
|S21|2
|S21|2
dB
10 mA
3 mA
1 mA
0.1 mA
-0.2
-10
0V
1V
10 V
-15
-20
-0.3
-25
-0.4
0
0.5
1
1.5
2
GHz
-30
0
3
f
0.5
1
1.5
2
GHz
3
f
5
2011-07-21
Package SC79
6
BA592/BA892...
2011-07-21
Package SCD80
BA592/BA892...
Package Outline
0.2
M
A
+0.05
0.13 -0.03
0.8 ±0.1
0.2 ±0.05
10˚MAX.
1.7 ±0.1
1
0.3 ±0.05
Cathode
marking
7˚ ±1.5˚
1.3 ±0.1
A
2
0.7 ±0.1
0.35
1.45
Foot Print
0.35
Marking Layout (Example)
2005, June
Date code
BAR63-02W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
Reel with 2 mm Pitch
2
0.2
2.5
8
1.45
Standard
4
Cathode
marking
0.4
0.9
Cathode
marking
7
0.7
2011-07-21
BA592/BA892...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75 1) ) CES-Code
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
8
2011-07-21
Package SOD323
9
BA592/BA892...
2011-07-21
Package TSLP-2-1
10
BA592/BA892...
2011-07-21
BA592/BA892...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
11
2011-07-21