Vishay BAS16-V-GS18 Small signal fast switching diode Datasheet

BAS16-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Ultra fast switching speed
e3
• Surface mount package ideally suited
for automatic insertion
• High conductance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
2
16923
Mechanical Data
Case: SOT23 Plastic case
Weight: approx. 8.0 mg
Polarity: cathode band
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS16-V
Ordering code
Marking
BAS16-V-GS18 or BAS16-V_GS08 A6
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Non repetitive peak reverse
voltage
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
Peak forward surge current
Symbol
Value
Unit
VRM
100
V
VRRM = VRWM = VR
75
V
tp = 1 s
IFSM
1
A
tp =1 µs
IFSM
2
A
Average forward current
half wave rectification with
resistive load and f ≥ 50 MHz, on
ceramic substrate
8 mm x10 mm x 0.7 mm
IFAV
150
mA
Forward current
on ceramic substrate
8 mm x 10 mm x 0.7 mm
IF
300
mA
Power dissipation
on ceramic substrate
8 mm x 10 mm x 0.7 mm
Ptot
350
mW
Document Number 85539
Rev. 1.5, 09-Mar-06
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BAS16-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Symbol
Value
Unit
RthJA
357
K/W
Tj = Tstg
- 55 to + 150
°C
on ceramic substrate
8 mm x 10 mm x 0.7 mm
Junction and storage
temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Max
Unit
IF = 1 mA
Test condition
Symbol
VF
Min
Typ.
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1
V
IF = 150 mA
VF
1.25
V
VR = 75 V
IR
1
µA
VR = 75 V, Tj = 150 °C
IR
50
µA
VR = 25 V, Tj = 150 °C
IR
30
µA
Diode capacitance
VR = 0, f = 1 MHz
CD
4
pF
Reverse recovery time
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
6
ns
Reverse current
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IF - Forward Current (mA)
100
T j = 100 °C
10
25 °C
1
0.1
IR – Reverse Current (nA)
10000
1000
V R = 20 V
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
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2
10
1
0.01
14356
100
0
14357
25
50 75 100 125 150 175 200
Tj – Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
Document Number 85539
Rev. 1.5, 09-Mar-06
BAS16-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
17418
Document Number 85539
Rev. 1.5, 09-Mar-06
www.vishay.com
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BAS16-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85539
Rev. 1.5, 09-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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