Vishay BAS283 Small signal schottky diode Datasheet

BAS281 / 282 / 283
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
e2
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612009
Applications
Mechanical Data
• General purpose and switching Schottky barrier
diode
• HF-Detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC / DC converter for notebooks
Case: QuadroMELF Glass case SOD80
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Ordering code
Remarks
BAS281
Part
VR = 40 V
Type differentiation
BAS281-GS18 or BAS281-GS08
Tape and Reel
BAS282
VR = 50 V
BAS282-GS18 or BAS282-GS08
Tape and Reel
BAS283
VR = 60 V
BAS283-GS18 or BAS283-GS08
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Part
Symbol
Value
Unit
BAS281
VR
40
V
BAS282
VR
50
V
BAS283
Peak forward surge current
Repetitive peak forward current
Forward current
Document Number 85500
Rev. 1.7, 17-Mar-06
tp = 1 s
VR
60
V
IFSM
500
mA
IFRM
150
mA
IF
30
mA
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BAS281 / 282 / 283
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction to ambient air
Symbol
Value
Unit
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
on PC board
50 mm x 50 mm x 1.6 mm
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Max
Unit
330
mV
VF
410
mV
VF
1000
mV
VR = VRmax
IR
200
nA
VR = 1 V, f = 1 MHz
CD
1.6
pF
IF = 0.1 mA
VF
IF = 1 mA
IF = 15 mA
Reverse current
Diode capacitance
Forward voltage
Min
Typ.
Typical Characteristics
1000
14
VR = 60 V
V R = VRRM
12
I R - Reverse Current (µA)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
RthJA = 540 kW
10
8
Limit at
PPRR - Limit
at100
100%%VRVR
6
4
PR - Limit at 80 % VR
10
1
2
0.1
25
0
25
15794
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
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100
15795
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
Document Number 85500
Rev. 1.7, 17-Mar-06
BAS281 / 282 / 283
Vishay Semiconductors
2.0
CD - Diode Capacitance (pF)
I F - Forward Current (A)
1000
100
Tj =150 °C
10
Tj = 25 °C
1
0.1
f = 1 MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0
15796
0.5
1
1.5
2.0
0.1
15797
V F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
12071
Document Number 85500
Rev. 1.7, 17-Mar-06
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BAS281 / 282 / 283
Vishay Semiconductors
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Document Number 85500
Rev. 1.7, 17-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 18-Jul-08
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