BAS70-HT3 to BAS70-06-HT3 VISHAY Vishay Semiconductors Schottky Diodes Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Space saving LiLiPut package Top view Pin 1 BAS70-HT3 BAS70-06-HT3 3 3 Top View Mechanical Data Case: LLP75-3B Plastic Package Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: 5 mg 1 2 2 1 BAS70-05-HT3 BAS70-04-HT3 3 3 Top View 2 1 2 1 17007 Parts Table Part Ordering code Marking Remarks BAS70-HT3 BAS70-HT3-GS08 73 Tape and Reel BAS70-04-HT3 BAS70-04-HT3-GS08 74 Tape and Reel BAS70-05-HT3 BAS70-05-HT3-GS08 75 Tape and Reel BAS70-06-HT3 BAS70-06-HT3-GS08 76 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Symbol Value VRRM 70 Unit V IF 200 mA Forward continuous current Tamb = 25 °C Surge forward current tp < 1 s, Tamb = 25 °C IFSM 600 mA Power dissipation Tamb = 25 °C Ptot 200 mW Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Test condition Symbol Value Unit RθJA 430 °C Junction temperature Tj 125 °C Storage temperature range TS - 55 to +125 °C Document Number 85689 Rev. 3, 02-Jun-03 www.vishay.com 1 BAS70-HT3 to BAS70-06-HT3 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min V(BR)R 70 Typ. Max Unit 20 100 nA VF 410 mV VF 1000 mV 2 pF 5 ns Reverse breakdown voltage IR = 10 µA (pulsed) Leakage current VR = 50 V, tp < 300 µs IR Forward voltage tp < 300 µs, IF = 1.0 mA tp < 300 µs, IF = 15 mA Capacitance VR = 0 V, f = 1 MHz Ctot Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ω V 1.5 trr Package Dimensions in mm 18057 www.vishay.com 2 ISO Method E Document Number 85689 Rev. 3, 02-Jun-03 BAS70-HT3 to BAS70-06-HT3 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85689 Rev. 3, 02-Jun-03 www.vishay.com 3