Pan Jit BAS70SDW Surface mount schottky diode array Datasheet

BAS70TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected
in various configurations housed in a very small SOT-363 (SC70-6L)
4
FEATURES
5
6
Maximum forward voltage @ 1.0mA of 0.41V
3
Maximum leakage current @ 50V of 100nA
2
1
Reverse voltage rating of 70V
In compliance with EU RoHS 2002/95/EC directives
SOT- 363
APPLICATIONS
Rail-to-rail ESD protection
Various
Configurations
(See Diagrams
Below)
Overshoot and undershoot switching control
Mobile phones and accessories
Video game consoles connector ports
BAS70TW
BAS70ADW
BAS70CDW
Isolated Triple
Common Anode
Common Cathode
6
5
4
1
2
3
6
5
4
1
2
3
Marking Code: 70A
Marking Code: 70T
6
5
4
1
2
3
BAS70SDW
Series
6
5
4
1
2
3
Marking Code: 70S
Marking Code: 70C
MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted
Rating
Symbol
Value
VRRM
70
V
Continuous Reverse Voltage
VR
70
V
Continuous Forward Current
IF
200
mA
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
I FSM
0.6
A
Total Power Dissipation (Note 1)
P tot
225
mW
Operating Junction Temperature Range
TJ
-55 to +125
°C
Storage Temperature Range8
Tstg
-55 to +125
°C
Repetitive Peak Reverse Voltage
Units
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
9/1/2009
Symbol
Value
Units
R thja
556
°C/W
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BAS70TW/ADW/CDW/SDW
ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted
Parameter
Breakdown Voltage (Note 1)
Symbol
Conditions
Min
Typ
Max
Units
V BR
I BR = 100 uA
70
-
-
V
I F = 1.0 mA
-
-
0.41
I F = 10 mA
-
-
0.75
I F = 15 mA
-
-
1.0
VF
Forward Voltage (Note 1)
V
Reverse Leakage Current (Note 1)
IR
V R = 50 V
-
-
100
nA
Junction Capacitance
CD
0Vdc Bias, f =1 MHz
-
1.25
2.0
pF
Reverse Recovery Time
(See Figure 1)
t rr
I F = 10mA, I R= 10mA
R L= 100 Ohms;
measured at IRrec = 1mA
-
-
5
ns
Note 1: Short duration (<300us) test pulse to minimize self heating
820 Ω
+10 V
2 .0 k Ω
100 µH
0 .1 µ F
0 .1 µ F
IF
?
DUT
5 0 Ω O u tp u t
P u ls e
G e n e ra to r
5 0 Ω In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA
2. Input pulse is adjusted to IR(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
9/1/2009
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BAS70TW/ADW/CDW/SDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
100
o
10
Revers e Curren t,I R ( m A)
Forward Current,I F (mA)
T J =125 C
T J =75 oC
o
T J =25 C
1
T J =-40 oC
10
T J =125 oC
1
T J =75 oC
0.1
0.01
T J =25 oC
0.001
0.1
0
0.2
0.4
0.6
0.8
1.0
0
20
Forward Voltage,V F (V)
40
60
80
Reverse Voltage,V R (V)
Fig.2 Typical Forward Characteristics
Fig.3 Typical Reverse Characteristics
1.4
Capacitance,C(pF)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Reverse Voltage,V R (V)
Fig.4 Typical Reverse Characteristics
9/1/2009
Page 3
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BAS70TW/ADW/CDW/SDW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BAS70xxx T/R7 - 7" reel, 3K units per reel
BAS70xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2009
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
9/1/2009
Page 4
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