Vishay BAT46W-V Small signal schottky diode Datasheet

BAT46W-V
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features very low turn-on
voltage and fast switching.
• This device is protected by a PN junction
guard ring against excessive voltage,
such as electrostatic discharges.
• This diode is also available in the DO-35 case with
the type designation BAT46 and in the MiniMELF
case with the type designation LL46.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17431
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAT46W-V
Ordering code
Type Marking
Remarks
BAT46W-V-GS18 or BAT46W-V-GS08
L6
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
1)
1)
Unit
100
V
IF
1501)
mA
tp < 1 s, δ < 0.5
IFRM
3501)
mA
tp < 10 ms
IFSM
7501)
mA
Tamb = 65 °C
Ptot
1501)
mW
Repetitive peak reverse voltage
Surge forward current
Value
VRRM
Forward continuous current
Repetitive peak forward current
Symbol
Valid provided that electrodes are kept at ambient temperature
Document Number 85663
Rev. 1.4, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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BAT46W-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3001)
K/W
Thermal resistance junction to ambient air
Tj
125
°C
Ambient operating temperature range
Tamb
- 55 to + 125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Junction temperature
1)
Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current2)
Forward voltage2)
Diode capacitance
2)
Test condition
Symbol
Min
IR = 100 µA (pulsed)
V(BR)
100
Typ.
Max
Unit
V
VR = 1.5 V
IR
0.5
µA
VR = 1.5 V, Tj = 60 °C
IR
5
µA
VR = 10 V
IR
0.8
µA
VR = 10 V, Tj = 60 °C
IR
7.5
µA
VR = 50 V
IR
2
µA
VR = 50 V, Tj = 60 °C
IR
15
µA
VR = 75 V
IR
5
µA
VR = 75 V, Tj = 60 °C
IR
20
µA
IF = 0.1 mA
VF
250
mV
IF = 10 mA
VF
450
mV
IF = 250 mA
VF
1000
mV
VR = 0 V, f = 1 MHz
CD
10
pF
VR = 1 V, f = 1 MHz
CD
6
pF
Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IR - Reverse Leakage Current (µA)
I F - Forward Current (mA)
1000
T j = 60 °C
100
10
25 °C
1
0.1
0.01
10
T j = 60 °C
1
Tj = 25 °C
0.1
0.01
0
18546
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
www.vishay.com
0
1.2
Figure 1. Typical Instantaneous Forward Characteristics
2
100
18547
20
40
60
80
100
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
For technical questions within your region, please contact one of the following: Document Number 85663
[email protected], [email protected], [email protected]
Rev. 1.4, 05-Aug-10
BAT46W-V
Vishay Semiconductors
Ptot - Power Dissipation (mW)
250
200
150
100
50
0
200
50
100
150
Tamb - Ambient Temperature (°C)
0
18548
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
Package Dimensions in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Document Number 85663
Rev. 1.4, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
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