Vishay BAV19WS-V-GS08 Small signal switching diodes, high voltage Datasheet

BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• For general purpose
e3
• These diodes are also available in other
case styles including: the DO35 case with the type
designation BAV19 - BAV21, the MiniMELF case
with the type designation BAV100 - BAV103, the
SOT23 case with the type designation BAS19 BAS21 and the SOD123 case with the type designation BAV19W-V - BAV21W-V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
BAV19WS-V
VR = 100 V
BAV19WS-V-GS18 or BAV19WS-V-GS08
A8
Tape and Reel
BAV20WS-V
VR = 150 V
BAV20WS-V-GS18 or BAV20WS-V-GS08
A9
Tape and Reel
BAV21WS-V
VR = 200 V
BAV21WS-V-GS18 or BAV21WS-V-GS08
AA
Tape and Reel
Document Number 85726
Rev. 1.4, 31-Jul-06
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1
BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Repetitive peak reverse voltage
Part
Symbol
Value
Unit
BAV19WS-V
VR
100
V
BAV20WS-V
VR
150
V
BAV21WS-V
VR
200
V
BAV19WS-V
VRRM
120
V
BAV20WS-V
VRRM
200
V
BAV21WS-V
VRRM
250
V
Forward continuous current
Tamb = 25 °C
IF
2501)
mA
Rectified current (average) half
wave rectification with resist.
load
Tamb = 25 °C
IF(AV)
2001)
mA
Repetitive peak forward current
f ≥ 50 Hz, θ = 180 °,
Tamb = 25 °C
IFRM
6251)
mA
Surge forward current
t < 1 s, Tj = 25 °C
IFSM
1
A
Power dissipation
Tamb = 25 °C
Ptot
200
1)
mW
1) Valid provided that leads are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Symbol
Value
Unit
RthJA
6501)
K/W
Tj
1501)
°C
Junction temperature
Tstg
Storage temperature range
- 65 to +
1501)
°C
1) Valid provided that leads are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Max
Unit
IF = 100 mA
Test condition
Part
Symbol
VF
Min
Typ.
1.00
V
IF = 200 mA
VF
1.25
V
VR = 100 V
BAV19WS-V
IR
100
nA
VR = 100 V, Tj = 100 °C
BAV19WS-V
IR
15
µA
VR = 150 V
BAV20WS-V
IR
100
nA
VR = 150 V, Tj = 100 °C
BAV20WS-V
IR
15
µA
VR = 200 V
BAV21WS-V
IR
100
nA
VR = 200 V, Tj = 100 °C
BAV21WS-V
IR
15
µA
Ω
Dynamic forward resistance
IF = 10 mA
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
pF
Reverse recovery time
IF = 30 mA, IR = 30 mA,
Irr = 3 mA, RL = 100 Ω
trr
50
ns
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2
rf
5
Document Number 85726
Rev. 1.4, 31-Jul-06
BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
T j = 100 ° C
100
25 ° C
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
10
IF - Forward Current (mA)
100
Figure 4. Dynamic Forward Resistance vs. Forward Current
1000
0.2
I R ( Tj ) / I R (25 °C) - Leakage Current
0.3
I O , I F - Admissible Forward Current (A)
1
18861
Figure 1. Forward Current vs. Forward Voltage
DC current I F
Current (rectif.) I O
0.1
0
0
30
60
90
120
100
10
Figure 2. Admissible Forward Current vs. Ambient Temperature
0.1
0
18862
100
50
0
0
18864
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85726
Rev. 1.4, 31-Jul-06
T j = 25 ° C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
20 40 60 80 100 120 140 160 180 200
Tamb - Ambient Temperature (°C)
40 60 80 100 120 140 160 180 200
Tj - Junction Temperature (°C)
2.0
1.8
CD - Diode Capacitance (pF)
150
20
Figure 5. Leakage Current vs. Junction Temperature
250
200
Reverse Voltage
BAV19WS-V VR = 100 V
BAV20WS-V V R = 150 V
BAV21WS-V V R = 200 V
1
150
Tamb - Ambient Temperature (°C)
18859
Ptot - Admissible Power Dissipation (W)
10
1
VF - Forward Voltage (V)
18858
100
rf - Dynamic Forward Resistance (Ω)
I F - Forward Current (mA)
1000
18863
1
10
100
VR - Reverse Voltage (V)
Figure 6. Capacitance vs. Reverse Voltage
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3
BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
0.1 (0.004) max
0.10 (0.004)
0.15 (0.006)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in mm (Inches): SOD323
0.25 (0.010) min
1.95 (0.077)
1.60 (0.063)
foot print recommendation:
0.6 (0.024)
0.6 (0.024)
1.6 (0.063)
0.6 (0.024)
1.1 (0.043)
2.85 (0.112)
2.50 (0.098)
1.5 (0.059)
0.20 (0.008)
0.40 (0.016)
cathode bar
Document no.: S8-V-3910.02-001 (4)
Rev. 03 - Date: 08.November 2004
17443
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4
Document Number 85726
Rev. 1.4, 31-Jul-06
BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85726
Rev. 1.4, 31-Jul-06
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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