Vishay BAV302-TR3 Small signal switching diodes, high voltage Datasheet

BAV300 / 301 / 302 / 303
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
•
•
•
•
•
Silicon Epitaxial Planar Diodes
Saving space
e2
Hermetic sealed parts
Fits onto SOD323 / SOT23 footprints
Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612315
Applications
Mechanical Data
• General purposes
Case: MicroMELF Glass case
Weight: approx. 12 mg
Cathode Band Color: Black
Packaging Codes/Options:
TR3 / 10 k per 13" reel (8 mm tape), 10 k/box
TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
Ordering code
Remarks
BAV300
VRRM = 60 V
BAV300-TR3 or BAV300-TR
Tape and Reel
BAV301
VRRM = 120 V
BAV301-TR3 or BAV301-TR
Tape and Reel
BAV302
VRRM = 200 V
BAV302-TR3 or BAV302-TR
Tape and Reel
BAV303
VRRM = 250 V
BAV303-TR3 or BAV303-TR
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Peak reverse voltage
Reverse voltage
Forward continuous current
Part
Symbol
Value
Unit
BAV300
VRRM
60
V
BAV301
VRRM
120
V
BAV302
VRRM
200
V
BAV303
VRRM
250
V
BAV300
VR
50
V
BAV301
VR
100
V
BAV302
VR
150
V
BAV303
VR
200
V
IF
250
mA
Peak forward surge current
tp = 1 s, Tj = 25 °C
IFSM
1
A
Forward peak current
f = 50 Hz
IFM
625
mA
Document Number 85545
Rev. 1.9, 07-Mar-06
www.vishay.com
1
BAV300 / 301 / 302 / 303
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Test condition
Symbol
Value
Unit
RthJA
500
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
mounted on epoxy-glass hard
tissue, Fig. 4
35 µm copper clad, 0.9 mm2
copper area per electrode
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Max
Unit
VF
1000
mV
BAV300
IR
100
nA
VR = 100 V
BAV301
IR
100
nA
VR = 150 V
BAV302
IR
100
nA
VR = 200 V
BAV303
IR
100
nA
Forward voltage
IF = 100 mA
Reverse current
VR = 50 V
Breakdown voltage
Min
Typ.
Tj = 100 °C, VR = 50 V
BAV300
IR
15
µA
BAV301
IR
15
µA
Tj = 100 °C, VR = 150V
BAV302
IR
15
µA
15
µA
Tj = 100 °C, VR = 200V
BAV303
IR
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
BAV300
V(BR)
60
V
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
BAV301
V(BR)
120
V
BAV302
V(BR)
200
V
BAV303
V(BR)
250
VR = 0, f = 1 MHz
Differential forward resistance
Reverse recovery time
2
Symbol
Tj = 100 °C, VR = 100 V
Diode capacitance
www.vishay.com
Part
V
CD
1.5
IF = 10 mA
rf
5
IF = IR = 30 mA, iR = 3 mA,
RL = 100 Ω
trr
pF
Ω
50
ns
Document Number 85545
Rev. 1.9, 07-Mar-06
BAV300 / 301 / 302 / 303
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
0.71
I R - Reverse Current (µA)
1000
1.3
1.27
0.152
100
Scattering Limit
9.9
10
0.355
25
1
VR = VRRM
0.1
10
2.5
0.01
0
40
80
120
160
200
95 10329
24
Tj - Junction Temperature (°C)
94 9084
Figure 1. Reverse Current vs. Junction Temperature
Figure 4. Board for RthJA definition (in mm)
I F - Forward Current (mA)
1000
Tj = 25 °C
100
Scattering Limit
10
1
0.1
0
94 9085
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
rf - Differential Forward Resistance (Ω)
Figure 2. Forward Current vs. Forward Voltage
1000
100
Tj = 25 °C
10
1
0.1
94 9089
1
10
100
I F - Forward Current (mA)
Figure 3. Differential Forward Resistance vs. Forward Current
Document Number 85545
Rev. 1.9, 07-Mar-06
www.vishay.com
3
BAV300 / 301 / 302 / 303
Vishay Semiconductors
2.0 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
)
1.
35
la (0.
ss 05
3
G
1.2 (0.047)
1.1 (0.043)
1 (0.039) surface plan
Glass case
MicroMELF
<
Cathode indification
surface plan
0.6
(0.024)
Package Dimensions in mm (Inches)
> R 2.5 (R 0.098)
Glass
ISO Method E
Wave Soldering
1.4 (0.055)
1.2 (0.047)
Reflow Soldering
0.8 (0.031)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
0.8 (0.031)
1.0 (0.039)
2.4 (0.094)
2.8 (0.110)
Document No.: 6.560-5007.01-4
Rev. 11, 07.Feb.2005
9612072
www.vishay.com
4
Document Number 85545
Rev. 1.9, 07-Mar-06
BAV300 / 301 / 302 / 303
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85545
Rev. 1.9, 07-Mar-06
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
Similar pages