Vishay BAV70-V Small signal switching diode, dual Datasheet

BAV70-V
Vishay Semiconductors
Small Signal Switching Diode, Dual
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common
e3
cathode
• This diode is also available in other configurations including:a dual common anode to
cathode with type designation BAV99-V, a dual
common anode with type designation BAW56-V,
and a single diode with type designation BAL99-V.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002-96/EC
Mechanical Data
3
1
2
18108
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Case: SOT23 Plastic case
Weight: approx. 8.8 mg
Parts Table
Part
BAV70-V
Ordering code
BAV70-V-GS18 or BAV70-V-GS08
Marking
Remarks
JJ
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage, peak reverse
voltage
Forward current (continuous)
Non repetitive peak forward
current
Value
Unit
70
V
IF
250
mA
tp = 1 µs
IFSM
2
A
tp = 1 ms
IFSM
1
A
tp = 1 s
IFSM
0.5
A
Ptot
3501)
mW
Power dissipation
1)
Symbol
VR, VRM
Device on fiberglass substrate, see layout
Document Number 85546
Rev. 1.7, 09-Mar-06
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BAV70-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
4301)
°C/W
Tj
150
°C
Tj = Tstg
- 65 to + 150
°C
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Device on Fiberglass substrate, see layout on second page.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Max
Unit
IF = 1 mA
Test condition
Symbol
VF
Min
Typ.
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1
V
IF = 150 mA
VF
1.25
V
VR = 70 V
IR
2.5
µA
VR = 70 V, Tj = 150 °C
IR
50
µA
VR = 25 V, Tj = 150 °C
IR
30
µA
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
pF
Reverse recovery time
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
6
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IF - Forward Current (mA)
1000
100
T j = 100 °C
10
25 °C
1
0.1
0.01
14356
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
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Figure 2. Peak forward current IFM = f (tp)
Document Number 85546
Rev. 1.7, 09-Mar-06
BAV70-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
17418
Document Number 85546
Rev. 1.7, 09-Mar-06
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BAV70-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85546
Rev. 1.7, 09-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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