CYSTEKEC BAV70S3 High -speed double diode Datasheet

Spec. No. : C303S3S
Issued Date : 2003.06.10
Revised Date
Page No. : 1/4
CYStech Electronics Corp.
High – speed double diode
BAV70S3
Description
The BAV70S3 consists of two high-speed switching diodes with common cathodes, fabricated in planar
technology, and encapsulated in the small SOT-323 plastic SMD package.
Equivalent Circuit
Outline
BAV70S3
SOT-323
1
2
Common cathode
3
1:Anode
2:Anode
3:Common cathode
Anode
Anode
Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 75V
• Repetitive peak reverse voltage: max. 85V
• Repetitive peak forward current: max. 450mA.
Applications
• High-speed switching in thick and thin-film circuits.
BAV70S3
CYStek Product Specification
Spec. No. : C303S3S
Issued Date : 2003.06.10
Revised Date
Page No. : 2/4
CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
t=1s
Total power dissipation(Note 1)
Junction Temperature
Storage Temperature
Symbol
VRRM
VR
IF
Min
-
IFRM
IFSM
Ptot
Tj
Tstg
-65
Max
85
75
215
125
450
Unit
V
V
4
1
0.5
200
150
+150
A
A
A
mW
°C
°C
mA
mA
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters
Symbol
Forward voltage
VF
Reverse current
IR
Diode capacitance
Cd
Reverse recovery time
trr
Forward recovery voltage
Vfr
Conditions
Min
Typ.
-
-
-
-
-
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=75V
VR=25V,Tj=150℃
VR=75V,Tj=150℃
VR=0V, f=1MHz
when switched from IF=10mA to
IR=10mA,RL=100Ω, measured
at IR=1mA
when switched from IF=10mA
tr=20ns
Max
715
855
1
1.25
30
2.5
60
100
Unit
mV
mV
V
V
nA
µA
µA
µA
-
1.5
pF
-
-
4
ns
-
-
1.75
V
Thermal Characteristics
Symbol
Parameter
Conditions
Value
Rth, j-a
thermal resistance from junction to ambient
Note 1
625
Unit
℃/W
Note 1: Device mounted on an FR-4 PCB.
BAV70S3
CYStek Product Specification
Spec. No. : C303S3S
Issued Date : 2003.06.10
Revised Date
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Forward Current vs Forward Voltage
Forward Current vs Ambient Temperature
275
225
250
225
single diode loaded
200
Forward Current---IF(mA)
Forward Current---IF(mA)
250
175
double diode loaded
150
125
100
75
50
200
175
150
125
100
75
50
25
25
0
0
0
50
100
150
0
200
0.2
0.4 0.6 0.8
1
Forward Voltage---VF(V)
Ambient Temperature---Ta(℃)
Non-repetitive peak forward
current vs pulse duration
0.7
Diode Capacitance---CD(pF)
Non-repetitive peak forward
current---IFSM(A)
1.4
Diode Capacitance vs Reverse Voltage
100
10
1
0.1
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
Pulse Duration---tp(μs)
BAV70S3
1.2
10000
0
2
4
6
8
10
12
14
16
Reverse Voltage---VR(V)
CYStek Product Specification
Spec. No. : C303S3S
Issued Date : 2003.06.10
Revised Date
Page No. : 4/4
CYStech Electronics Corp.
SOT-323 Dimension
Marking:
3
A
Q
A1
1
C
TE
A4
Lp
2
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
2 mm
1
Style : Pin 1. Anode 2.Anode
3. Common Cathode
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAV70S3
CYStek Product Specification
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