Siemens BAW79B Silicon switching diodes (for high-speed switching high breakdown voltage common cathode) Datasheet

Silicon Switching Diodes
BAW 79 A
… BAW 79 D
For high-speed switching
● High breakdown voltage
● Common cathode
●
Type
Marking
Ordering Code
(tape and reel)
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
GE
GF
GG
GH
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
Pin Configuration
Package1)
SOT-89
Maximum Ratings per Diode
Parameter
Symbol
BAW
Values
BAW
BAW
Unit
BAW
Reverse voltage
VR
50
100
200
400
Peak reverse voltage
VRM
50
100
200
400
Forward current
IF
1
Peak forward current
IFM
1
Surge forward current
t = 1 µs
IFS
10
Total power dissipation
TS = 115 ˚C
Ptot
1
W
Junction temperature
Tj
150
˚C
Storage temperature range Tstg
V
A
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
Junction - soldering point
Rth JS
1)
2)
≤
≤
175
K/W
35
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BAW 79 A
… BAW 79 D
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
V
V(BR)
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Forward voltage1)
IF = 1 A
IF = 2 A
VF
Reverse current
VR = VRmax
VR = VRmax, TA = 150 ˚C
IR
50
100
200
400
–
–
–
–
–
–
–
–
–
–
–
–
1.6
2
–
–
–
–
1
50
V
µA
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CD
–
10
–
pF
Reverse recovery time
IF = 200 mA, IR = 200 mA,
RL = 100 Ω
measured at IR = 20 mA
trr
–
1
–
µs
Test circuit for reverse recovery time
Pulse generator: tp = 5 µs, D = 0.05
tr = 0.6 ns, Rj = 50 Ω
1)
Oscillograph:
Pulse test: tp ≤ 300 µs, D = 2 %.
Semiconductor Group
2
R = 50 Ω
tr = 0.35 ns
C ≤ 1 pF
BAW 79 A
… BAW 79 D
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
Forward current IF = f (VF)
TA = 25 ˚C
Peak forward current IFM = f (t)
TA = 25 ˚C
Reverse current IR = f (TA)
VR = VRmax
Semiconductor Group
3
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