Fairchild BC213L Pnp general purpose amplifier Datasheet

BC213L
BC213L
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
• See PN200 for Characteristics.
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
-30
VCBO
Collector-Base Voltage
-45
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current (DC)-
-500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
- Continuous
Units
V
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Voltage
IC = -2mA, IB = 0
-30
V(BR)CBO
Collector-Base Voltage
IC = -10µA, IE = 0
-45
V
V
V(BR)EBO
Emitter-Base Voltage
IE = -10µA, IC = 0
-5.0
V
ICBO
Collector Cut-off Current
VCB = -30V, IE = 0
-15
nA
IEBO
Emitter Cut-off Current
VEB = -4.0V, IC = 0
-15
nA
On Characteristics *
hFE
DC Current Gain
VCE = -5V, IC = -10µA
VCE = -5V, IC = -2.0mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
40
80
400
-0.25
-0.6
VBE(sat)
Base-Emitter Saturation Voltage
IC = -100mA, IB = -5.0mA
VBE(on)
Base-Emitter On Voltage
VCE = -5.0V, IC = -2.0mA
-0.6
200
V
-1.1
V
-0.72
V
Small Signal Characteristics
fT
Current gain Bandwidth Product
VCE = -5.0V, IC = -10mA
f = 100MHz
NF
Noise Figure
VCE = -5.0V, IC = -200µA
RG = 2.0kΩ, f = 1.0KHz
hfe
Small Signal Current Gain
IC = -2.0mA, VCE = -5.0V
f = 1.0KHz
MHz
10
dB
80
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
625
5.0
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
BC213L
Thermal Characteristics TA=25°C unless otherwise noted
BC213L
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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