Fairchild BC32725TA Switching and amplifier application Datasheet

BC327/328
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCES
Parameter
Collector-Emitter Voltage
: BC327
: BC328
Value
Units
-50
-30
V
V
-45
-25
V
V
Collector-Emitter Voltage
: BC327
: BC328
VCEO
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-800
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Test Condition
IC= -10mA, IB=0
Collector-Emitter Breakdown Voltage
: BC327
: BC328
IC= -0.1mA, VBE=0
BVEBO
Emitter-Base Breakdown Voltage
IE= -10µA, IC=0
ICES
Collector Cut-off Current
: BC327
: BC328
VCE= -45V, VBE=0
VCE= -25V, VBE=0
BVCES
hFE1
hFE2
Min.
Typ.
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA
Units
-45
-25
V
V
-50
-30
V
V
-5
V
-2
-2
DC Current Gain
Max.
100
40
-100
-100
nA
nA
630
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -500mA, IB= -50mA
-0.7
VBE (on)
Base-Emitter On Voltage
VCE= -1V, IC= -300mA
-1.2
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA, f=20MHz
100
MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
12
pF
V
V
hFE Classification
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60-
100-
170-
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
BC327/328
Typical Characteristics
-20
mA
- 5.0 A
I B = - 4.5m
I B = 4.0mA
A
I B = - 3.5m A
I B = - 3.0m A
I B = - 2.5m
mA
IB =
- 2.0
IB =
-400
-300
1.5
IB = -
IB=
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
-500
mA
-200
PT = 60
0mW
IB = - 1.0mA
IB = - 0.5mA
-100
µA
- 80
µA
- 70
I =
B
-16
IB=
µA
- 60
IB=
P
-12
IB=
µA
- 40
IB = -
-8
30µA
0µA
IB = - 2
-4
IB = - 10µA
IB = 0
IB = 0
-0
-1
-2
-3
-4
-5
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
PULSE
hFE, DC CURRENT GAIN
V CE = - 2.0V
100
- 1.0V
10
-1
-10
-100
-30
-40
-50
Figure 2. Static Characteristic
1000
1
-0.1
-20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-1000
-10
IC = 10 IB
PULSE
V CE(sat)
-1
-0.1
V BE(sat)
-0.01
-0.1
IC[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
1000
fT[MHz], GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
=6
00
mW
T
µA
- 50
VCE = -1V
PULSE
-100
-10
-1
-0.1
-0.4
VCE = -5.0V
100
10
-0.5
-0.6
-0.7
-0.8
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
-0.9
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 6. Gain Bandwidth Product
Rev. B1, August 2002
BC327/328
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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