Jiangsu BC350-TO-92 Transistor (pnp) Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350
TRANSISTOR (PNP)
TO—92
FEATURES
Power dissipation
PCM : 0.3 W(Tamb=25℃)
Collector current
ICM:
-0.1 A
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
Test
1.EMITTER
2. BASE
3. COLLECTOR
1 2 3
unless
otherwise
specified)
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100μA , IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-35V, IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -3V, IC=0
-0.1
μA
DC current gain
hFE
VCE=-5 V, IC= -2mA
Collector-emitter saturation voltage
VCEsat
IC= -10mA, IB= -1mA
-0.3
V
Base-emitter saturation voltage
VBEsat
IC= -10mA, IB= -1mA
-1
V
Transition frequency
fT
VCE=-5 V,IC=-10mA,
f=30MHz
40
125
450
MHz
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
E
C
A
A1
D
b
L
φ
e
e1
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
3.300
3.700
0.130
0.146
A1
1.100
1.400
0.043
0.055
b
0.380
0.550
0.015
0.022
c
0.360
0.510
0.014
0.020
D
4.400
4.700
0.173
0.185
D1
3.430
E
4.300
0.135
4.700
0.169
1.270TYP
e
0.185
0.050TYP
e1
2.440
2.640
0.096
0.104
L
14.100
14.500
0.555
0.571
1.600
Ö
0.000
0.380
0.063
0.000
0.015
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