Fairchild BC546/547 Switching and application Datasheet

BC546/547/548/549/550
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
TO-92
1
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: BC546
: BC547/550
: BC548/549
Value
80
50
30
Units
V
V
V
VCEO
Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
65
45
30
V
V
V
VEBO
Emitter-Base Voltage
6
5
V
V
IC
Collector Current (DC)
100
mA
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
: BC546/547
: BC548/549/550
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB=30V, IE=0
Min.
110
Typ.
hFE
DC Current Gain
VCE=5V, IC=2mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
90
200
VBE (sat)
Base-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
700
900
VBE (on)
Base-Emitter On Voltage
VCE=5V, IC=2mA
VCE=5V, IC=10mA
580
Units
nA
800
660
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA, f=100MHz
300
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
3.5
Cib
Input Capacitance
VEB=0.5V, IC=0, f=1MHz
9
NF
Noise Figure
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ, f=30~15000MHz
: BC546/547/548
: BC549/550
: BC549
: BC550
Max.
15
2
1.2
1.4
1.4
250
600
mV
mV
mV
mV
700
720
mV
mV
MHz
6
pF
10
4
4
3
dB
dB
dB
dB
pF
hFE Classification
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC546/547/548/549/550
Typical Characteristics
100
IB = 400µA
VCE = 5V
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
100
IB = 350µA
IB = 300µA
80
IB = 250µA
60
IB = 200µA
IB = 150µA
40
IB = 100µA
20
10
1
IB = 50µA
0.1
0.0
0
0
2
4
6
8
10
12
14
16
18
20
VCE = 5V
hFE, DC CURRENT GAIN
1000
100
10
1
100
0.8
1.0
1.2
10000
IC = 10 IB
V BE(sat)
1000
100
V CE(sat)
10
1000
1
10
IC[mA], COLLECTOR CURRENT
100
1000
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
f=1MHz
IE = 0
10
1
0.1
1
10
100
V CB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Output Capacitance
©2002 Fairchild Semiconductor Corporation
1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT
100
Cob[pF], CAPACITANCE
0.6
Figure 2. Transfer Characteristic
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
Figure 1. Static Characteristic
10
0.4
VBE[V], BASE-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
0.2
VCE = 5V
100
10
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A2, August 2002
BC546/547/548/549/550
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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