Siemens BC617 Npn silicon darlington transistors (high current gain high collector current) Datasheet

BC 617
BC 618
NPN Silicon Darlington Transistors
BC 617
BC 618
High current gain
● High collector current
●
2
1
Type
Marking
Ordering Code
BC 617
BC 618
–
Q62702-C1137
Q62702-C1138
Pin Configuration
1
2
3
C
B
E
3
Package1)
TO-92
Maximum Ratings
Parameter
Symbol
Values
BC 617
BC 618
Unit
V
Collector-emitter voltage
VCE0
40
55
Collector-base voltage
VCB0
50
80
Emitter-base voltage
VEB0
12
Collector current
IC
500
Peak collector current
ICM
800
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TC = 66 ˚C
Ptot
625
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
mA
– 65 … + 150
Thermal Resistance
Junction - ambient
Rth JA
≤
200
Junction - case2)
Rth JC
≤
135
1)
2)
K/W
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BC 617
BC 618
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 617
BC 618
V(BR)CE0
Collector-base breakdown voltage
IC = 100 µA
V(BR)CB0
BC 617
BC 618
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0
Collector cutoff current
VCB = 40 V
VCB = 60 V
VCB = 40 V, TA = 150 ˚C
VCB = 60 V, TA = 150 ˚C
ICB0
BC 617
BC 618
BC 617
BC 618
Emitter cutoff current
VEB = 4 V
DC current gain
IC = 100 µA; VCE = 5 V
IC = 10 mA; VCE = 5 V1)
IC = 200 mA; VCE = 5 V1)
IC = 1000 mA; VCE = 5 V1)
IEB0
V
40
55
–
–
–
–
50
80
–
–
–
–
12
–
–
–
–
–
–
–
–
–
–
100
100
10
10
nA
nA
µA
µA
–
–
100
nA
4000
2000
10000
4000
20000
10000
10000
4000
–
–
–
–
–
–
–
–
–
–
–
–
70000
50000
–
–
–
hFE
BC 617
BC 618
BC 617
BC 618
BC 617
BC 618
BC 617
BC 618
Collector-emitter saturation voltage1)
IC = 200 mA; IB = 0.2 mA
VCEsat
–
–
1.1
Base-emitter saturation voltage1)
IC = 200 mA; IB = 0.2 mA
VBEsat
–
–
1.6
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
V
BC 617
BC 618
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT
–
150
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
3.5
–
pF
Total power dissipation Ptot = f (TA; TC)
Semiconductor Group
Collector cutoff current ICB0 = f (TA)
VCB = 40 V, 60 V
3
BC 617
BC 618
Permissible pulse load RthJA = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V, f = 20 MHz
Collector-emitter saturation voltage
VCEsat = f (IC)
hFE = 1000, parameter = TA
Base-emitter saturation voltage
VBEsat = f (IC)
hFE = 1000, parameter = TA
Semiconductor Group
4
BC 617
BC 618
DC current gain hFE = f (IC)
Semiconductor Group
Capacitance C = f (VEB, VCB)
5
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