Fairchild BC640TF Pnp epitaxial silicon transistor Datasheet

BC640
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC639
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T
a
Symbol
= 25°C unless otherwise noted
Parameter
Value
Units
V
VCER
Collector-Emitter Voltage at RBE=1KΩ
-100
VCES
Collector-Emitter Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
ICP
Peak Collector Current
-1.5
A
IB
Base Current
-100
mA
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
IC= -10mA, IB=0
ICBO
Collector Cut-off Current
VCB= -30V, IE=0
IEBO
Emitter Cut-off Current
VEB= -5V, IC=0
hFE1
hFE2
hFE3
DC Current Gain
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
Min.
Typ.
Max.
Units
-0.1
μA
-10
μA
-80
V
25
40
25
160
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -500mA, IB= -50mA
-0.5
V
VBE (on)
Base-Emitter On Voltage
VCE= -2V, IC= -500mA
-1
V
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA,
f=50MHz
© 2009 Fairchild Semiconductor Corporation
BC640 Rev. C3
100
MHz
www.fairchildsemi.com
1
BC640 — PNP Epitaxial Silicon Transistor
March 2009
BC640 — PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Marking
Device
Package
BC640
BC640
TO-92
BC640
BC640BU
TO-92
BC640
BC640TA
TO-92
BC640
BC640TAR
TO-92
BC640
BC640TF
TO-92
BC640
BC640TFR
TO-92
BC640
BC640_J35Z
TO-92
BC640
BC640_J61Z
TO-92
© 2009 Fairchild Semiconductor Corporation
BC640 Rev. C3
www.fairchildsemi.com
2
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-500
1000
VCE = - 2V
IB = - 1.6 mA
-400
IB = - 1.4 mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB = - 1.8 mA
IB = - 1.2 mA
IB = - 1.0 mA
-300
IB = - 0.8 mA
IB = - 0.6 mA
-200
IB = - 0.4 mA
-100
IB = - 0.2 mA
-0
100
10
-0
-10
-20
-30
-40
-50
-1
-100
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
-1000
IC = 10 IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
VBE(sat)
-1
-0.1
VCE(sat)
-0.01
VCE = - 2V
-100
-10
-1
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
100
Cob[pF], CAPACITANCE
f=1MHz
10
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
© 2009 Fairchild Semiconductor Corporation
BC640 Rev. C3
www.fairchildsemi.com
3
BC640 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
BC640 — PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
14.47 ±0.40
0.46 ±0.10
+0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
0.38 –0.05
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
BC640 Rev. C3
www.fairchildsemi.com
4
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Advance Information
Formative / In Design
Preliminary
First Production
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Not In Production
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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