UNISONIC TECHNOLOGIES CO., LTD BC817 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Lead-free: BC817L Halogen-free:BC817G ORDERING INFORMATION Normal BC817-x-AE3-R BC817-x-AL3-R Ordering Number Lead Free BC817L-x-AE3-R BC817L-x-AL3-R BC817L-x-AE3-R Halogen Free BC817G-x-AE3-R BC817G-x-AL3-R SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel (1) R: Tape Reel (1)Packing Type (2) AE3: SOT-23, AL3: SOT-323 (2)Package Type (3) x: refer to Classification of hFE (3)Rank (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn (4)Lead Plating Package MARKING BC817-16 6A L: Lead Free G: Halogen Free BC817-25 6B www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd L: Lead Free G: Halogen Free BC817-40 6C L: Lead Free G: Halogen Free 1 of 4 QW-R206-025.E BC817 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous RATINGS UNIT 50 V 45 V 5.0 V 1.5 A SOT-23 310 mW Collector Dissipation PC SOT-323 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCES VCEO VEBO IC ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL BVCEO BVCES BVEBO Collector Cut-OFF Current ICBO TEST CONDITIONS IC=10mA, IB=0 IC=100μA,IE=0 IE=10μA, Ic=0 VCB=20V VCB=20V,Ta=150°C MIN TYP MAX UNIT 45 50 5 100 5 V V V nA μA ON CHARACTERISTICS hFE1 hFE2 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE(SAT) VBE(ON) IC=100mA,VCE=1.0V IC =500mA, VCE=1.0V IC =500mA,IB=50mA IC =500mA, VCE=1.0V See Classification 40 0.7 1.2 V V CLASSIFICATION OF hFE1 RANK RANGE 16 100-250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 160-400 40 250-600 2 of 4 QW-R206-025.E BC817 NPN SILICON TRANSISTOR Base-Emitter Voltage, VBE(SAT) (V) Base-Emitter On Voltage, VBE(ON) (V) TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-025.E BC817 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Power Dissipation, PD(mW) Gain Bandwidth Pro Duct, hFE(MHz) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-025.E