Fairchild BC846CMTF Npn epitaxial silicon transistor Datasheet

BC846- BC850
tm
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
3
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BC846
: BC847/850
: BC848/849
80
50
30
V
V
V
VCEO
Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849
65
45
30
V
V
V
VEBO
Emitter-Base Voltage
6
5
V
V
IC
Collector Current (DC)
100
mA
PC
Collector Power Dissipation
310
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
: BC846/847
: BC848/849/850
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
15
nA
ICBO
Collector Cut-off Current
VCB=30V, IE=0
hFE
DC Current Gain
VCE=5V, IC=2mA
VCE (sat)
Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
90
200
VBE (sat)
Collector-Base Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
700
900
VBE (on)
Base-Emitter On Voltage
VCE=5V, IC=2mA
VCE=5V, IC=10mA
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA,
f=100MHz
300
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
3.5
Cib
Input Capacitance
VEB=0.5V, IC=0, f=1MHz
9
NF
Noise Figure
: BC846/847/848
: BC849/850
VCE= 5V, IC= 200µA
RG=2KΩ, f=1KHz
2
1.2
10
4
dB
dB
VCE= 5V, IC= 200µA
RG=2KΩ, f=30~15000Hz
1.4
1.4
4
3
dB
dB
: BC849
: BC850
110
580
800
660
250
600
mV
mV
mV
mV
700
720
mV
mV
MHz
6
pF
pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
BC846- BC850 Rev. B
1
www.fairchildsemi.com
BC846- BC850 NPN Epitaxial Silicon Transistor
August 2006
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
Ordering Information
Device(note1)
Device Marking
Package
Packing Method
Qty(pcs)
Pin Difinitions
BC846AMTF
BC846BMTF
8AA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
8AB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC846CMTF
8AC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC847AMTF
8BA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC847BMTF
8BB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC847CMTF
8BC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC848AMTF
8CA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC848BMTF
8CB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC848CMTF
8CC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC849AMTF
8DA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC849BMTF
8DB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC849CMTF
8DC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC850AMTF
8EA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC850BMTF
8EB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC850CMTF
8EC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
Note1 :
Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
2
BC846- BC850 Rev. B
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BC846- BC850 NPN Epitaxial Silicon Transistor
hFE Classification
10000
IB = 400µA
IB = 350µA
80
VCE = 5V
IB = 300µA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
100
IB = 250µA
60
IB = 200µA
IB = 150µA
40
IB = 100µA
20
1000
100
IB = 50µA
10
0
0
4
8
12
16
1
20
10
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
100
IC = 10 IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
1000
100
VCE(sat)
10
1
10
100
VCE = 2V
10
1
0.1
0.0
1000
0.2
IC[mA], COLLECTOR CURRENT
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz
10
1
0.1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
0.8
1.0
1.2
1000
VCE=5V
100
10
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
3
BC846- BC850 Rev. B
0.6
Figure 4. Base-Emitter On Voltage
100
1
0.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Cob[pF], CAPACITANCE
100
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BC846- BC850 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
BC846- BC850 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
4
BC846- BC850 Rev. B
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
5
BC846- BC850 Rev. B
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BC846- BC850 NPN Epitaxial Silicon Transistor
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