MOTOROLA BC847BLT1 Case 318-08, style 6 sot-23 (to-236ab) Datasheet

Order this document
by BC846ALT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
1
BASE
BC846, BC847 and BC848 are
Motorola Preferred Devices
2
EMITTER
MAXIMUM RATINGS
Symbol
BC846
BC847
BC850
BC848
BC849
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
Rating
Collector Current — Continuous
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient
RqJA
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CEO
65
45
30
—
—
—
—
—
—
V
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CES
80
50
30
—
—
—
—
—
—
V
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CBO
80
50
30
—
—
—
—
—
—
V
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846A,B
BC847A,B,C
BC848A,B,C, BC849A,B,C, BC850A,B,C
V(BR)EBO
6.0
6.0
5.0
—
—
—
—
—
—
V
ICBO
—
—
—
—
15
5.0
nA
µA
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
—
—
—
90
150
270
—
—
—
—
110
200
420
180
290
520
220
450
800
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A, BC849A, BC850A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
—
—
—
—
0.25
0.6
V
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
—
—
0.7
0.9
—
—
V
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
—
660
—
700
770
mV
fT
100
—
—
MHz
Cobo
—
—
4.5
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC849A,B,C, BC850A,B,C
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
0.8
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 2. “Saturation” and “On” Voltages
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
10
4.0
TA = 25°C
0.9
1.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
0.02
0.1
1.0
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
2
—
—
1.0
VCE = 10 V
TA = 25°C
1.5
0
dB
—
—
2.0
0.2
pF
NF
10
20
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
10
1.0
IC, COLLECTOR CURRENT (mA)
100
Figure 4. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
40
20
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
BC847/BC848
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 5. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
50
30
Figure 6. Current–Gain – Bandwidth Product
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.2
0.5
2.0
50
100
200
50
100
200
–1.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
1.0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
Figure 9. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–1.4
–1.8
θVB for VBE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
3
BC846
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
1.0 2.0
10 20
0.5
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
4
50
100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
H
D
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BC846ALT1/D
Similar pages