ON BC847BPDW1T2G Dual general purpose transistor Datasheet

BC846BPDW1T1G,
BC847BPDW1T1G,
BC848CPDW1T1G
Dual General Purpose
Transistors
http://onsemi.com
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(3)
(2)
(1)
Q1
Q2
Compliant
(4)
MAXIMUM RATINGS − NPN
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC846
BC847
BC848
VCEO
65
45
30
V
Collector-Base Voltage
BC846
BC847
BC848
VCBO
80
50
30
V
VEBO
6.0
V
IC
100
mAdc
Symbol
Value
Unit
BC846
BC847
BC848
VCEO
−65
−45
−30
V
BC846
BC847
BC848
VCBO
−80
−50
−30
V
VEBO
−5.0
V
IC
−100
mAdc
Emitter−Base Voltage
Collector Current − Continuous
Collector-Emitter Voltage
Collector-Base Voltage
(6)
MARKING
DIAGRAM
6
1
MAXIMUM RATINGS − PNP
Rating
(5)
SOT−363
CASE 419B
STYLE 1
XX MG
G
1
XX = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Mark Package
Shipping†
BC846BPDW1T1G BB
SOT−363
(Pb−Free)
3000 /
Tape & Reel
BC847BPDW1T1G BF
SOT−363
(Pb−Free)
3000 /
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
BC847BPDW1T2G BF
SOT−363
(Pb−Free)
3000 /
Tape & Reel
THERMAL CHARACTERISTICS
BC848CPDW1T1G BL
SOT−363
(Pb−Free)
3000 /
Tape & Reel
Emitter−Base Voltage
Collector Current − Continuous
Characteristic
Total Device Dissipation
Per Device
FR−5 Board (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
380
250
mW
3.0
mW/°C
RqJA
328
°C/W
TJ, Tstg
−55 to +150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 6
1
Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
65
45
30
−
−
−
−
−
−
80
50
30
−
−
−
−
−
−
80
50
30
−
−
−
−
−
−
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
15
5.0
−
−
150
270
−
−
200
420
290
520
475
800
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mA)
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847B Only
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
V
V
V
V
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
BC846B, BC847B
BC848C
BC846B, BC847B
BC848C
−
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
4.5
pF
−
−
10
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
http://onsemi.com
2
NF
dB
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
−65
−45
−30
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−15
−4.0
−
−
150
270
−
−
200
420
290
520
475
800
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
−
−
4.5
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
Collector −Base Breakdown Voltage
(IC = −10 mA)
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)CEO
BC846 Series
BC847 Series
BC848 Series
V(BR)CES
BC846 Series
BC847 Series
BC848 Series
V(BR)CBO
BC846 Series
BC847 Series
BC848 Series
V(BR)EBO
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ICBO
V
V
V
V
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
hFE
BC846B, BC847B
BC848C
BC846B, BC847B
BC848C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
http://onsemi.com
3
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL NPN CHARACTERISTICS − BC846
0.30
500
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.05
−55°C
0.0001
25°C
0.5
150°C
0.3
0.1
0.0001
0.001
0.01
0.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
2.0
-1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
1.2
1.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.001
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
0.6
0.2
25°C
Figure 1. DC Current Gain vs. Collector
Current
−55°C
0.4
150°C
0.10
IC, COLLECTOR CURRENT (A)
0.9
0.7
0.15
IC, COLLECTOR CURRENT (A)
IC/IB = 20
0.8
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
-1.4
-1.8
qVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
0.2
Figure 5. Collector Saturation Region
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 6. Base−Emitter Temperature Coefficient
http://onsemi.com
4
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL NPN CHARACTERISTICS − BC846
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 7. Capacitance
Figure 8. Current−Gain − Bandwidth Product
http://onsemi.com
5
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL PNP CHARACTERISTICS — BC846
0.30
500
400
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.20
25°C
0.15
0.10
−55°C
0.05
0.0001
0.1
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
−55°C
IC/IB = 20
25°C
0.6
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
-2.0
-1.0
-1.6
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
Figure 9. DC Current Gain vs. Collector
Current
0.7
-1.2
0.001
IC, COLLECTOR CURRENT (A)
0.8
0.2
150°C
IC, COLLECTOR CURRENT (A)
1.0
0.9
IC/IB = 20
0.25
0
1
VBE(on), BASE−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
150°C
-20
Figure 13. Collector Saturation Region
-1.4
-1.8
qVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 14. Base−Emitter Temperature Coefficient
http://onsemi.com
6
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL PNP CHARACTERISTICS — BC846
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TJ = 25°C
20
Cib
10
8.0
6.0
Cob
4.0
2.0
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
VCE = -5.0 V
500
200
100
50
20
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
-50 -100
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
http://onsemi.com
7
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL NPN CHARACTERISTICS − BC847 SERIES
0.30
500
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.1
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
−55°C
IC/IB = 20
25°C
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.01
Figure 17. DC Current Gain vs. Collector
Current
0.8
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.001
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.9
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
Figure 21. Collector Saturation Region
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
http://onsemi.com
8
100
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL NPN CHARACTERISTICS − BC847 SERIES
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 23. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 24. Current−Gain − Bandwidth Product
http://onsemi.com
9
50
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL PNP CHARACTERISTICS − BC847 SERIES
0.35
150°C
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
500
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
−55°C
IC/IB = 20
25°C
150°C
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.1
1.2
1.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -20 mA
-0.4
0
0.01
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
0.7
-0.8
0.001
Figure 25. DC Current Gain vs. Collector
Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.8
0.2
0.20
IC, COLLECTOR CURRENT (A)
1.0
0.9
150°C
0.25
0
1
IC/IB = 20
0.30
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
IC = -200 mA
IC = -100 mA
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
Figure 29. Collector Saturation Region
-0.2
-10
-1.0
IC, COLLECTOR CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
http://onsemi.com
10
-100
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL PNP CHARACTERISTICS − BC847 SERIES
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 31. Capacitances
Figure 32. Current−Gain − Bandwidth Product
http://onsemi.com
11
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
1000
0.30
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
900
800 150°C
700
600
25°C
500
400
300 −55°C
200
100
0
0.001
0.01
0.1
−55°C
0.05
0.0001
IC/IB = 20
−55°C
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.1
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
Figure 36. Base Emitter Voltage vs. Collector
Current
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.01
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
0.8
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.001
Figure 33. DC Current Gain vs. Collector
Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.10
IC, COLLECTOR CURRENT (A)
0.9
0.2
25°C
0.15
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
0.20
0
1
IC/IB = 20
0.25
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
Figure 37. Collector Saturation Region
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 38. Base−Emitter Temperature
Coefficient
http://onsemi.com
12
100
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 39. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 40. Current−Gain − Bandwidth Product
http://onsemi.com
13
50
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
1000
0.30
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 1 V
150°C
900
800
700
25°C
600
500
400
−55°C
300
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
−55°C
IC/IB = 20
25°C
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 43. Base Emitter Saturation Voltage vs.
Collector Current
Figure 44. Base Emitter Voltage vs. Collector
Current
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.1
Figure 42. Collector Emitter Saturation Voltage
vs. Collector Current
0.6
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -20 mA
-0.4
0
0.01
Figure 41. DC Current Gain vs. Collector
Current
0.7
-0.8
0.001
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.8
0.2
150°C
0.20
0
1
1.0
0.9
IC/IB = 20
0.25
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
IC = -200 mA
IC = -100 mA
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
Figure 45. Collector Saturation Region
-0.2
-10
-1.0
IC, COLLECTOR CURRENT (mA)
Figure 46. Base−Emitter Temperature
Coefficient
http://onsemi.com
14
-100
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 47. Capacitances
Figure 48. Current−Gain − Bandwidth Product
http://onsemi.com
15
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
1.0
10
100
1.0k
10k
100k
1.0M
t, TIME (ms)
Figure 49. Thermal Response
The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 50 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure
49. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values
less than the limitations imposed by the secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 50. Active Region Safe Operating Area
http://onsemi.com
16
BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G
PACKAGE DIMENSIONS
SC−88/SOT−363/SC70−6
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
17
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC846BPDW1T1/D
Similar pages