ON BC848AWT1 General purpose transistors(npn silicon) Datasheet

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by BC846AWT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
Collector Current — Continuous
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Characteristic
PD
150
mW
Thermal Resistance, Junction to Ambient
RqJA
833
°C/W
PD
2.4
mW/°C
TJ, Tstg
– 55 to +150
°C
Total Device Dissipation
Junction and Storage Temperature
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CEO
65
45
30
—
—
—
—
—
—
V
Collector – Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
V(BR)CES
80
50
30
—
—
—
—
—
—
V
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CBO
80
50
30
—
—
—
—
—
—
V
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)EBO
6.0
6.0
5.0
—
—
—
—
—
—
V
ICBO
—
—
—
—
15
5.0
nA
µA
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
—
—
—
90
150
270
—
—
—
—
110
200
420
180
290
520
220
450
800
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
—
—
—
—
0.25
0.6
V
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
—
—
0.7
0.9
—
—
V
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
—
660
—
700
770
mV
fT
100
—
—
MHz
Cobo
—
—
4.5
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
0.8
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 2. “Saturation” and “On” Voltages
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
10
4.0
TA = 25°C
0.9
1.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
0.02
0.1
1.0
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
2
—
—
1.0
VCE = 10 V
TA = 25°C
1.5
0
dB
—
—
2.0
0.2
pF
NF
10
20
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
10
1.0
IC, COLLECTOR CURRENT (mA)
100
Figure 4. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
40
20
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
BC847/BC848
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 5. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
50
30
Figure 6. Current–Gain – Bandwidth Product
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.2
0.5
2.0
50
100
200
50
100
200
–1.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
1.0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
Figure 9. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–1.4
–1.8
θVB for VBE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
3
BC846
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
4
50
100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SOT–323/SC–70
SOT–323/SC–70 POWER DISSIPATION
The power dissipation of the SOT–323/SC–70 is a function
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–323/SC–70
package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT–323/SC–70 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–323/SC–70
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad. Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
1
2
D
V
G
C
0.05 (0.002)
R N
J
DIM
A
B
C
D
G
H
J
K
L
N
R
S
V
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.035
0.049
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.031
0.039
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.90
1.25
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
0.80
1.00
2.00
2.20
0.30
0.40
K
H
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 419–02
ISSUE G
SOT–323/SC–70
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6
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BC846AWT1/D
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