ETL BC848CDW1T1 Dual general purpose transistor Datasheet

Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
6
5
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
4
6
Q2
5
See Table
Q1
4
1
1
2
2
3
3
SOT-363 /SC-88
CASE 419B STYLE1
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
Collector–Emitter Voltage
V CEO
65
45
30
V
Collector–Base Voltage
V CBO
80
50
30
V
Emitter–Base Voltage
V
6.0
6.0
5.0
V
100
100
100
mAdc
Collector Current -Continuous
EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
380
250
mW
mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
R θJA
T J , T stg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
Package
Shipping
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
BC846b–1/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
65
45
30
—
—
—
—
—
—
80
50
30
—
—
—
—
—
—
80
50
30
—
—
—
—
—
—
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
15
5.0
—
—
150
270
—
—
200
420
—
—
—
—
580
—
290
520
—
—
0.7
0.9
660
—
450
800
0.25
0.6
—
—
700
770
fT
100
—
—
MHz
C obo
NF
—
—
4.5
pF
dB
—
—
—
—
10
4.0
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Collector–Emitter Breakdown Voltage
(I C = 10 µA, V EB = 0)
BC846 Series
BC847 Series
BC848 Series
Collector–Base Breakdown Voltage
(I C = 10 µA)
BC846 Series
BC847 Series
BC848 Series
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
BC846 Series
Collector Cutoff Current
BC847 Series
BC848 Series
(V CB = 30 V)
(V CB = 30 V, T A = 150°C)
V
V
(BR)CEO
V (BR)CES
V
V
V
(BR)CBO
V (BR)EBO
I CBO
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(I C = 10 µA, V CE = 5.0 V)
h FE
BC846B, BC847B, BC848B
BC847C, BC848C
(I C = 2.0 mA, V CE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat)
Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
V BE(sat)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
V BE(on)
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
—
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Noise Figure (I C = 0.2 mA,
V CE = 5.0 V dc, R S = 2.0 kΩ, BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz)
BC847C, BC848C
BC846b–2/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
1.0
0.9
1.5
0.8
1.0
0.7
V,VOLTAGE (VOLTS)
h FE , NORMALIZED DC CURRENT GAIN
2.0
0.8
0.6
0.4
0.5
0.4
0.3
0.2
0.3
0.1
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.1
200
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
0.02
0.2 0.3
Figure 1. Normalized DC Current Gain
θ vb, TEMPERATURE COEFFICIENT (mV/ ° C)
0.2
V CE, COLLECTOR-EMITTER VOLTAGE(V)
0.6
0.1
1.0
10
20
1.0
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
100
I B , BASE CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
BC846b–3/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
10
C,CAPACITANCE(pF)
7.0
5.0
3.0
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
400
300
200
100
80
60
40
30
20
0.5 0.7
1.0
3.0
5.0
7.0
10
20
30
50
0.8
2.0
1.0
0.5
0.6
0.4
0.2
0.2
0.1 0.2
1.0
10
0
0.2
100
0.5
2.0
1.6
1.2
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
1.0
2.0
5.0
10
20
50
100
200
100
200
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
10
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
20
θ VB , TEMPERATURE COEFFICIENT (mV/ ° C)
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V CE , COLLECTOR-EMITTER VOLTAGE(VOLTS)
2.0
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
1.0
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN (NORMALIZED)
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
T f , CURREN-GAIN-BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
BC846b–4/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Z θJA (t) = r(t) R θJA
R θJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R θJC (t)
P (pk)
t1
0.01
t2
DUTY CYCLE, D = t 1 /t 2
SINGLE PULSE
0.001
0
1.0
10
100
1.0K
10K
100K
1.0M
t, TIME (ms)
Figure 11. Thermal Response
I C , COLLECTOR CURRENT (mA)
-200
The safe operating area curves indicate I C –V CE limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T J(pk) = 150°C; T C or
T A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T J(pk) < 150°C. T J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limitations imposed by the secondary breakdown.
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
BC846b–5/5
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