UTC BC858-B-AE3-R Switching and amplifier application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC856/BC857/BC858
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
„
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits
*Complement to BC846/BC847/BC848
*Pb-free plating product number:
BC856L/BC857L/BC858L
„
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BC856-x-AE3-R
BC856L-x-AE3-R
BC857-x-AE3-R
BC857L-x-AE3-R
BC858-x-AE3-R
BC858L-x-AE3-R
Note: x: Rank
„
Package
SOT-23
SOT-23
SOT-23
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
BC856
BC857
BC858
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-028,B
BC856/BC857/BC858
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
-80
V
Collector-Base Voltage
VCBO
-50
V
-30
V
-65
V
Collector-Emitter Voltage
VCEO
-45
V
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Dissipation
PD
310
mW
Collector Current (DC)
IC
-100
mA
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
BC856
BC857
BC858
BC856
BC857
BC858
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
DC Current Gain
SYMBOL
TEST CONDITIONS
ICBO
VCB=-30V, IE=0
hFE
VCE=-5V, IC=-2mA
IC=-10mA,IB=-0.5mA
Collector-Emitter Saturation Voltage VCE(SAT)
IC=-100mA,IB=-5mA
IC=-10mA,IB=-0.5mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-100mA,IB=-5mA
VCE=-5V,IC=-2mA
Base-Emitter On Voltage
VBE(ON)
VCE=-5V,IC=-10mA
Current Gain Bandwidth Product
fT
VCE=-5V,IC=-10mA, f=100MHz
Output Capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Noise Figure
NF
VCE=-5V, IC=-200μA, f=1KHz, RG=2KΩ
„
MIN
110
-600
TYP MAX UNIT
-15
nA
800
-90 -300 mV
-250
-700
-900
-660
150
2
-650
mV
mV
mV
-750 mV
-800 mV
MHz
6
pF
10
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
110-220
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
200-450
C
420-800
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QW-R206-028,B
BC856/BC857/BC858
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current, IC (mA)
Saturation Voltage, VBE(SAT). VEC(SAT) (V)
DC Current Gain, hFE
Collector Current, IOUT(mA)
„
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-028,B
BC856/BC857/BC858
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-028,B
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