Diodes BC858CW-7 Pnp surface mount small signal transistor Datasheet

BC856AW - BC858CW
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
Ideally Suited for Automatic Insertion
Complementary NPN Types Available
(BC846W-BC848W)
For Switching and AF Amplifier Applications
SOT-323
A
C
Mechanical Data
·
·
·
·
·
·
·
·
B C
Case: SOT-323, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202, Method
208
Pin Connections: See Diagram
Marking Code: See Table Below & Diagram
on Page 2
Ordering & Date Code Information: See Page 2
Approx. Weight: 0.006 grams
B
E
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
G
E
0.30
0.40
H
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0°
8°
K
M
J
D
F
L
All Dimensions in mm
Marking Code (Note 2)
Type
Marking
Type
BC856AW
K3A
BC857CW
Marking
K3G
BC856BW
K3B
BC858AW
K3J, K3A, K3V
BC857AW
K3V, K3A
BC858BW
K3K, K3B, K3W
BC857BW
K3W, K3B
BC858CW
K3L, K3G
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Value
Unit
BC856
BC857
BC858
VCBO
-80
-50
-30
V
BC856
BC857
BC858
VCEO
-65
-45
-30
V
VEBO
-5.0
V
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
Power Dissipation (Note 1)
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-65 to +150
°C
Collector Current
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
DS30251 Rev. A-2
1 of 2
BC856AW - BC858CW
Electrical Characteristics
@ TA =25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
BC856
BC857
BC858
V(BR)CBO
-80
-50
-30
—
—
—
—
—
—
V
IC = 10mA, IB = 0
BC856
BC857
BC858
V(BR)CEO
-65
-45
-30
—
—
—
—
—
—
V
IC = 10mA, IB = 0
V(BR)EBO
-5
—
—
V
IE = 1mA, IC = 0
hFE
125
220
420
180
290
520
250
475
800
—
VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 3)
VCE(SAT)
—
-75
-250
-300
-650
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 3)
VBE(SAT)
—
—
-700
-850
—
-950
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 3)
VBE(ON)
-600
—
-650
—
-750
-820
mV
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
VCB = -30V
VCB = -30V, TA = 150°C
fT
100
200
—
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
CCBO
—
3
4.5
pF
VCB = -10V, f = 1.0MHz
NF
—
—
10
dB
VCE = -5.0V, IC = 200µA,
RS = 2kW, f = 1kHz,
Df = 200Hz
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage (Note 3)
DC Current Gain (Note 3)
Current Gain Group A
B
C
Collector-Cutoff Current (Note 3)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
Test Condition
3. Short duration pulse test to minimize self-heating effect.
Ordering Information
(Note 4)
Device
Packaging
Shipping
BC85xxW-7*
SOT-323
3000/Tape & Reel
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
Marking Information
YM
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30251 Rev. A-2
2 of 2
BC856AW - BC858CW
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