BC858UF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with BC848UF Ordering Information Type NO. Marking BC858UF Package Code SOT-323F AV : hFE rank Outline Dimensions unit : mm 1.95~2.25 0.40 Max. 1.20~1.40 1.30 Typ. 3 0.10 Max. 0.60~0.80 2 0.16 Max. 1.90~2.10 1 KST-3039-001 PIN Connections 1. Base 2. Emitter 3. Collector 1 BC858UF Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 Base-Emitter turn on voltage VBE(ON) Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise Figure Test Condition Min. Typ. Max. Unit -30 - - V VCE=-5V, IC=-2mA - - -700 mV VBE(sat) IC=-100mA, IB=-5mA - -900 - mV VCE(sat) IC=-100mA, IB=-5mA - - -650 mV VCB=-35V, IE= 0 - - -15 nA 110 - 800 - VCB=-5V, IC=-10mA - 150 - MHz Cob VCB=-10V, IE=0, f=1MHz - - 4.5 pF NF VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ, ∆f=200Hz - - 10 dB ICBO * hFE fT VCE=-5V, IC=-2mA * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-3039-001 2 BC858UF Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-3039-001 3