Diodes BCP5210TA Pnp silicon planar medium power transistors in sot223 Datasheet

BCP 51 / 52 / 53
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
Features
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Mechanical Data
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IC = -1A Continuous Collector Current
Low Saturation Voltage VCE(sat) < -500mV @ -0.5A
Gain groups 10 and 16
Epitaxial Planar Die Construction
Complementary NPN types: BCP54, 55 and 56
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT223
Case Material: Molded Plastic, “Green” Molding
Compound (Note 2)
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Applications
•
•
Medium Power Switching or Amplification Applications
AF driver and output stages
C
SOT223
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 3)
Product
BCP51TA
BCP5110TA
BCP5116TA
BCP5116TC
BCP52TA
BCP5210TA
BCP5216TA
BCP53TA
BCP5310TA
BCP5316TA
BCP5316TC
Notes:
Marking
BCP 51
BCP 5110
BCP 5116
BCP 5116
BCP 52
BCP 5210
BCP 5216
BCP 53
BCP 5310
BCP 5316
BCP 5316
Reel size (inches)
7
7
7
13
7
7
7
7
7
7
13
Tape width (mm)
12
12
12
12
12
12
12
12
12
12
12
Quantity per reel
1,000
1,000
1,000
4,000
1,000
1,000
1,000
1,000
1,000
1,000
4,000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
BCP
xxxx
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
BCP = Product Type Marking Code, Line 1.
xxxx = Product Type Marking Code, Line 2 as follows:
BCP51 = 51
BCP5110 = 5110
BCP5116 = 5116
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BCP52 = 52
BCP5210 = 5210
BCP5216 = 5216
BCP53 = 53
BCP5310 = 5310
BCP5316 = 5316
June 2011
© Diodes Incorporated
BCP 51 / 52 / 53
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
BCP51
-45
-45
BCP52
-60
-60
-5
-1
-2
-100
-200
BCP53
-100
-80
Unit
V
V
V
A
mA
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
2
62
19.4
-65 to +150
Unit
W
°C/W
°C/W
°C
4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
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BCP 51 / 52 / 53
160
60
50mm x 50mm 1oz Cu
Tamb = 25°C
50
40
Maximum Power (W)
Thermal Resistance (°C/W)
Thermal Characteristics
D=0.5
30
20
D=0.2
Single Pulse
D=0.05
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
120
Single pulse
100
80
60
40
20
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
50mm x 50mm 1oz Cu
Tamb = 25°C
140
Pulse Power Dissipation
50mm x 50mm
1oz Cu
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
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BCP 51 / 52 / 53
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Typ
Max
Unit
-
-
V
IC = -100µA
-
-
V
IC = -10mA
BVEBO
Min
-45
-60
-100
-45
-60
-80
-5
-
V
Collector Cut-off Current
ICBO
-
-
Emitter Cut-off Current
IEBO
-
-
-0.1
-20
-20
nA
hFE
25
40
25
-
250
-
-
VCE(sat)
VBE(on)
63
100
-
-
160
250
-0.5
-1.0
V
V
Transition Frequency
fT
150
-
-
MHz
Output Capacitance
Cobo
-
-
25
pF
IE = -10µA
VCB = -30V
VCB = -30V, TA = 150°C
VEB = -4V
IC = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2V
IC = -50mA, VCE = -10V
f = 100MHz
VCB = -10V, f = 1MHz
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 6)
BVCBO
BVCEO
Emitter-Base Breakdown Voltage
All versions
Static Forward Current Transfer Ratio (Note 6)
10 gain grp
16 gain grp
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
500
1.0
VCE = -5V
IB = 10mA
IB = 8mA
0.8
400
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
µA
Test Condition
IB = 6mA
0.6
IB = 4mA
0.4
IB = 2mA
T A = 150°C
300
T A = 85°C
200
100
0.2
0
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
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T A = 25°C
T A = -55°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
June 2011
© Diodes Incorporated
0.5
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
TA = -55°C
0.6
TA = 25°C
T A = 85°C
0.4
T A = 150°C
0.2
0.4
0.3
TA = 150°C
0.2
TA = 85°C
TA = 25°C
0.1
VCE = -2V
0
0.001
TA = -55°C
0.01
0.1
1
-IC, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.001
10
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
300
fT, GAIN-BANDWIDTH PRODUCT (MHz)
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
BCP 51 / 52 / 53
1.0
0.8
T A = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
IC / IB = 10
250
200
150
100
VCE = -5V
f = 100MHz
50
0
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
20
40
60
80
100
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
160
140
f = 1MHz
CAPACITANCE(pF)
120
100
80
Cibo
60
40
20
Cobo
0
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
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BCP 51 / 52 / 53
Package Outline Dimensions
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
Suggested Pad Layout
X1
Y1
C1
Y2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
X2
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
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BCP 51 / 52 / 53
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2011, Diodes Incorporated
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BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
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June 2011
© Diodes Incorporated
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