Siemens BCR35 Npn/pnp silicon digital tansistor array (switching circuit, inverter, interface circuit, drive circuit) Datasheet

BCR 35PN
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R1=10kΩ, R2=47kΩ)
Tape loading orientation
Type
Marking Ordering Code Pin Configuration
BCR 35PN
WUs
Package
Q62702-C2495 1=E1 2=B1 3=C2 4= E2 5=B2 6= C1 SOT-363
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
6
Input on Voltage
Vi(on)
20
DC collector current
IC
100
mA
Total power dissipation, TS = 115°C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
RthJA
≤ 275
RthJS
≤ 140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Nov-26-1996
BCR 35PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 100 µA, IB = 0
Collector-base breakdown voltage
nA
-
100
µA
-
167
hFE
70
-
-
VCEsat
mV
-
-
0.3
Vi(off)
IC = 100 µA, VCE = 5 V
Input on Voltage
-
-
IC = 10 mA, IB = 0.5 mA
Input off voltage
50
IEBO
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
-
-
VEB = 6 V, IC = 0
DC current gain
-
ICBO
VCB = 40 V, IE = 0
Emitter cutoff current
50
V(BR)CBO
IC = 10 µA, IB = 0
Collector cutoff current
V
V
0.5
-
1
0.5
-
1.4
Vi(on)
IC = 2 mA, VCE = 0.3 V
Input resistor
R1
7
10
13
kΩ
Resistor ratio
R1/R2
0.19
0.21
0.24
-
AC Characteristics for NPN Type
Transition frequency
fT
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
MHz
-
150
-
Ccb
VCB = 10 V, f = 1 MHz
pF
-
2
-
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Nov-26-1996
BCR 35PN
NPN TYPE
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20
10 2
10 3
-
hFE
IC
mA
10 2
10 1
10 1
10 0
-1
10
10
0
10
1
10 0
0.0
mA
0.2
0.4
0.6
V
IC
Input on Voltage Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)
1.0
V CEsat
Input off voltage Vi(off) = f(IC)
VCE = 5V (common emitter configuration)
10 1
10 2
mA
mA
IC
IC
10 0
10 1
10 -1
10 0
10 -2
10 -1
-1
10
10
0
10
1
10 -3
0.0
V
V i(on)
Semiconductor Group
0.5
1.0
V
2.0
V i(off)
3
Nov-26-1996
BCR 35PN
PNP TYPE
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20
10 2
10 3
-
hFE
IC
mA
10 2
10 1
10 1
10 0
-1
10
10
0
10
1
10 0
0.0
mA
0.2
0.4
0.6
V
IC
Input on Voltage Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)
1.0
V CEsat
Input off voltage Vi(off) = f(IC)
VCE = 5V (common emitter configuration)
10 1
10 2
mA
mA
IC
IC
10 0
10 1
10 -1
10 0
10 -2
10 -1
-1
10
10
0
10
1
10 -3
0.0
V
V i(on)
Semiconductor Group
0.5
1.0
V
2.0
V i(off)
4
Nov-26-1996
BCR 35PN
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
300
mW
Ptot
TS
TA
200
150
100
50
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f(tp)
Permissible Pulse Load Ptotmax / PtotDC = f(tp)
10 3
10 3
K/W
-
RthJS
Ptotmax/PtotDC
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1
-6
10
10
-5
Semiconductor Group
10
-4
10
-3
10
10 1
-2
-1
10
s 10
tp
0
5
10 0
-6
10
10
-5
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
Nov-26-1996
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