Renesas BCR3AS-12A-A1 Triac low power use Datasheet

BCR3AS-12A
Triac
Low Power Use
REJ03G0290-0200
Rev.2.00
Nov 30, 2007
Features
• IT (RMS) : 3 A
• VDRM : 600 V
• IFGTI , IRGTI, IRGT III : 15 mA (10 mA)Note5
• Non-Insulated Type
• Planar Passivation Type
• Lead Mounted Type
Outline
RENESAS Package code: PRSS0004ZD-D
(Package name: DPAK(L)-3)
4
2, 4
1.
2.
3.
4.
3
1
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
12
3
Applications
Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, washing
machine, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Note1
Non-repetitive peak off-state voltage
REJ03G0290-0200
Page 1 of 6
Rev.2.00
VDRM
Voltage class
12
600
VDSM
720
Symbol
Nov 30, 2007
Unit
V
V
BCR3AS-12A
Parameter
RMS on-state current
Symbol
IT (RMS)
RATINGS
3
Unit
A
Surge on-state current
ITSM
30
A
I2 t
3.7
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
3
0.3
6
0.3
– 40 to +125
– 40 to +125
0.26
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 108°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.7
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
15Note5
15Note5
15Note5
—
3.8
V
V
V
mA
mA
mA
V
°C/W
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5
—
—
V/µs
Tj = 125°C
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Tj = 125°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T2 tab.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0290-0200
Page 2 of 6
Rev.2.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR3AS-12A
Performance Curves
102
7 Tj = 25°C
5
3
2
Surge On-State Current (A)
100
7
5
3
2
0
1
2
3
4
30
25
20
15
10
5
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
102
7
5
3
2
101
7
5
3
2
PGM = 3W
PG(AV) = 0.3W
IGM =
0.5A
IFGT I, IRGT III
IRGT I
100
7
5
3
2
VGD = 0.2V
10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
35
0
100
5
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0290-0200
Page 3 of 6
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
40
101
7
5
3
2
10–1
Rated Surge On-State Current
Rev.2.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR3AS-12A
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
Case Temperature (°C)
140
8
360° Conduction
Resistive,
6 inductive loads
4
2
0
0
1
2
3
4
5
Ambient Temperature (°C)
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
103
7
5
4
3
2
Typical Example
Latching Current (mA)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Curves apply regardless
of conduction angle
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
10
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0290-0200
Page 4 of 6
Rev.2.00
Nov 30, 2007
103
7
5
3
2
102
7
5
3
2
Distribution
T2+, G–
Typical Example
101
7
5
3
+ +
2 T2–, G– Typical Example
T2 , G
100
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR3AS-12A
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
7
5
4
3
2
160
Typical Example
140 Tj = 125°C
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
4 Minimum
3 Characteristics
Value
2
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
100
7 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
6Ω
6Ω
A
6V
V
A
6V
330Ω
Test Procedure I
V
A
6V
V
330Ω
Test Procedure II
6Ω
330Ω
Test Procedure III
Rev.2.00
Nov 30, 2007
103
7
5
4
3
2
Typical Example
IRGT III
IRGT I
IFGT I
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
REJ03G0290-0200
Page 5 of 6
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Junction Temperature (°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
BCR3AS-12A
Package Dimensions
Package Name
DPAK(L)-(3)
JEITA Package Code

RENESAS Code
PRSS0004ZD-D
Previous Code
DPAK(L)-(3)/DPAK(L)-(3)V
MASS[Typ.]
0.36g
Unit: mm
6.5 ± 0.5
2.3 ± 0.2
5.4 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
(1.3)
1.15 ± 0.1
0.8 ± 0.1
0.6 ± 0.1
0.6 ± 0.1
4.7 ± 0.5
6.9 ± 0.5
5.5 ± 0.5
8.2 ± 0.6
0.55 ± 0.1
0.55 ± 0.1
0.55 ± 0.1
2.29
0.55 ± 0.1
2.29
Order Code
Lead form
Straight type
Standard packing
Vinyl sack
Quantity
100
Standard order code
Type name – A1
Note : Please confirm the specification about the shipping in detail.
REJ03G0290-0200
Page 6 of 6
Rev.2.00
Nov 30, 2007
Standard order
code example
BCR3AS-12A-A1
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