Renesas BCR5AM-12LB-A8 Triac medium power use (the product guaranteed maximum junction temperature of 150â°c) Datasheet

BCR5AM-12LB
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0452-0300
Rev.3.00
Nov 30, 2007
Features
• Non-Insulated Type
• Planar Passivation Type
• IT(RMS) : 5 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
3
1
12
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general purpose control applications
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0452-0300
Page 1 of 7
Rev.3.00
Nov 30, 2007
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Symbol
IT(RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG(AV)
VGM
IGM
Tj
Tstg
—
3
0.3
10
2
– 40 to +150
– 40 to +150
2.0
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Gate non-trigger voltage
VFGT I
VRGT I
VRGT III
IFGT I
IRGT I
IRGT III
VGD
—
—
—
—
—
—
0.2/0.1
—
—
—
—
—
—
—
1.5
1.5
1.5
20Note6
20Note6
20Note6
—
V
V
V
mA
mA
mA
V
Thermal resistance
Rth(j-c)
—
—
3.0
°C/W
Tj = 125°C/150°C,
VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
5/1
—
—
V/µs
Tj = 125°C/150°C
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 128°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
I
II
III
I
II
III
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 2.
3.
4.
5.
6.
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0452-0300
Page 2 of 7
Rev.3.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
100
7
5
90
Surge On-State Current (A)
102
3
2
101
Tj = 150°C
7
5
3
2
100
7
5
Tj = 25°C
3
2
10–1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
70
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
7
5
3 V = 1.5V
2 GT
100
7
5
3
2
PG(AV)
= 0.3W
PGM = 3W
IGM = 2A
IGT = 20mA
10–1
7
VGD = 0.1V
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
3
2
Typical Example
IRGT III
IRGT I
102
7
5
3
2
IFGT I
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G0452-0300
Page 3 of 7
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
80
0
100
4.0
5
3
2 VGM = 10V
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Rated Surge On-State Current
Rev.3.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103 2 3 5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Allowable Case Temperature vs.
RMS On-State Current
160
7
140
6 360° Conduction
Resistive,
5 inductive loads
4
3
2
1
0
2
3
4
5
6
7
8
Curves apply regardless
of conduction angle
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
3
2
4
5
6
8
7
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
1
140
160
All fins are black painted
aluminum and greased
120 × 120 × t2.3
120
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
1
3
2
4
0
5
6
7
Ambient Temperature (°C)
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
8
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
8
0
0.5
1.0
1.5
2.5
2.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
7
5
3
2
Typical Example
Holding Current (mA)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
REJ03G0452-0300
Page 4 of 7
Junction Temperature (°C)
Rev.3.00
Nov 30, 2007
102
7
5
4
3
2
3.0
VD = 12V
Distribution
Typical Example
101
7
5
4
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Breakover Voltage vs.
Junction Temperature
T2+, G+
Typical Example
T2–, G–
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20
0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
3
2
100
7 0
10
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
Minimum
Characteristics
Value
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G0452-0300
Page 5 of 7
Rev.3.00
Nov 30, 2007
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Latching Current (mA)
103
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Latching Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
III Quadrant
I Quadrant
3
2
100
7 0
10
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
IRGT I
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
Recommended Circuit Values Around The Triac
Load
6Ω
C1
A
6V
330Ω
V
Test Procedure I
V
A
V
330Ω
Test Procedure III
REJ03G0452-0300
Page 6 of 7
Rev.3.00
Nov 30, 2007
C0
R0
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Package Dimensions
Package Name
TO-220
JEITA Package Code
SC-46
Previous Code

RENESAS Code
PRSS0004AA-A
MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
φ3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name
Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
REJ03G0452-0300
Page 7 of 7
Rev.3.00
Nov 30, 2007
Standard order
code example
BCR5AM-12LB
BCR5AM-12LB-A8
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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