Seme LAB BCU81-SMD Npn epitaxial planar silicon transistor Datasheet

BCU81-SMD
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
4 .5
1 .6
1 .5
2 .5
1 .0
4 .2 5 m a x .
Ideal for high current driver applications
requiring low loss devices
0 .4 0
0 .4 0
0 .5 0
FEATURES
• LOW VCE(SAT)
• HIGH CURRENT
• HIGH ENERGY RATING
1 .5
3 .0
APPLICATIONS
-
+
*
• ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
SOT89
EFFICIENT LOW LOSS DEVICES
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base voltage
30V
VCEO
Collector – Emitter voltage (IB = 0)
10V
VEBO
Emitter – Base voltage
6V
IC
Collector current
3A
ICP
Collector Current (Pulse)
5A
PC
Collector Dissipation
500mW
(Mounted on Ceramic Board (250mm2 x 0.8mm)
1.3W
Tj
Junction Temperature
150°C
Tstg
Storage Temperature
–55 to 150°C
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim.9/98
BCU81-SMD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
V(BR)CEO
Collector – Emitter Base
Breakdown Voltage
V(BR)CBO
Collector – Base
Breakdown Voltage
Test Conditions
Typ.
Max.
Unit.
IC = 1mA
RBE = 0
10
V
IC = 10mA
IE = 0
30
V
IE = 10mA
IE = 0
6
V
V(BR)EBO
Emitter Base Breakdown Voltage
ICBO
IEBO
Collector Cut–Off Current
IC = 0
VCB = 20V
Emitter Cut–Off Current
VBE = 4V
hFE
fT
DC Current Gain
VCE = 2V
Transition frequency
VCE = 10V
Cob
Output Capacitance
VCB = 10V
Magnatec.
Min.
IC = 0
IC = 3A
IC = 50mA
f = 1MHz
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: [email protected] Website: http://www.semelab.co.uk
100
100
140
30
nA
nA
210
—
200
MHz
pF
Prelim.9/98
BCU81-SMD
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim.9/98
BCU81-SMD
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim.9/98
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