ON BCW32LT1 General purpose transistor Datasheet

BCW32LT1
General Purpose
Transistors
NPN Silicon
Features
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• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
32
Vdc
Collector-Base Voltage
VCBO
32
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAdc
Collector Current − Continuous
1
BASE
2
EMITTER
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
FR-5 Board(1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Value
SOT−23 (TO−236AB)
CASE 318
STYLE 6
Unit
mW
225
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to +150
°C
MARKING DIAGRAM
D2 M
M = Date Code
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BCW32LT1
BCW32LT1G
Package
Shipping†
SOT−23
3000 Units / Reel
SOT−23
(Pb−Free)
3000 Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 1
1
Publication Order Number:
BCW32LT1/D
BCW32LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, VEB = 0)
V(BR)CEO
32
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
32
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
−
−
Vdc
−
−
−
−
100
10
nAdc
Adc
200
−
450
−
−
0.25
0.55
−
0.70
Cobo
−
−
4.0
pF
NF
−
−
10
dB
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
10 A
0.2
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
0.1
10
20
50
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10
10k
Figure 1. Noise Voltage
20
50
100 200
500 1k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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2
2k
5k
10k
BCW32LT1
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
1M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
500k
20k
10k
5k
2.0 dB
2k
1k
500
200
100
50
BANDWIDTH = 1.0 Hz
200k
100k
50k
3.0 dB 4.0 dB
6.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (A)
10 dB
500 700
20k
10k
2.0 dB
2k
1k
500
200
100
1k
1.0 dB
5k
5.0 dB
8.0 dB
10
20
Figure 3. Narrow Band, 100 Hz
RS , SOURCE RESISTANCE (OHMS)
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (A)
500 700
1k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is defined as:
20k
NF 20 log10
10k
5k
1.0 dB
2k
1k
500
200
100
50
3.0 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
I = Noise Current of the Transistor referred to the input.
n (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
R = Source Resistance ()
2.0 dB
3.0 dB
5.0 dB
8.0 dB
S
10
20
30
50 70 100
200 300
500 700
2 2 12
S In RS en2 4KTR
4KTRS
1k
IC, COLLECTOR CURRENT (A)
Figure 5. Wideband
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3
BCW32LT1
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
400
TJ = 125°C
25°C
200
−55 °C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 s
80 DUTY CYCLE ≤ 2.0%
300 A
200 A
40
100 A
20
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region
V, VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 8. Collector Characteristics
1.4
1.2
400 A
60
0
20
IB = 500 A
50
1.6
0.8
25°C to 125°C
0
*VC for VCE(sat)
− 55°C to 25°C
−0.8
25°C to 125°C
−1.6
−2.4
0.1
100
*APPLIES for IC/IB ≤ hFE/2
Figure 9. “On” Voltages
VB for VBE
0.2
− 55°C to 25°C
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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4
50
100
BCW32LT1
TYPICAL DYNAMIC CHARACTERISTICS
10
TJ = 25°C
f = 1.0 MHz
C, CAPACITANCE (pF)
7.0
Cib
5.0
Cob
3.0
2.0
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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5
10
20
50
BCW32LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AK
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BCW32LT1/D
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