Infineon BCW61FN Pnp silicon af transistor Datasheet

BCW61, BCX71
PNP Silicon AF Transistor
For AF input stages and driver applications
3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 (NPN)
2
1
Type
Marking
Pin Configuration
BCW 61A
BAs
1=B
2=E
3=C
SOT23
BCW 61B
BBs
1=B
2=E
3=C
SOT23
BCW 61C
BCs
1=B
2=E
3=C
SOT23
BCW 61D
BDs
1=B
2=E
3=C
SOT23
BCW 61FF
BFs
1=B
2=E
3=C
SOT23
BCW 61FN
BNs
1=B
2=E
3=C
SOT23
BCX 71G
BGs
1=B
2=E
3=C
SOT23
BCX 71H
BHs
1=B
2=E
3=C
SOT23
BCX 71J
BJs
1=B
2=E
3=C
SOT23
BCX 71K
BKs
1=B
2=E
3=C
SOT23
1
VPS05161
Package
Jul-10-2001
BCW61, BCX71
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
32
32
45
Collector-base voltage
VCBO
32
32
45
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
Total power dissipation, TS = 71 °C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
BCW61 BCW61FF
BCX71 Unit
V
-65 ... 150
Thermal Resistance
Junction - soldering point1)
240
RthJS
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW61/61FF
32
-
-
BCX71
45
-
-
BCW61/61FF
32
-
-
BCX71
45
-
-
5
-
-
Collector-base breakdown voltage
IC = 10 µA, IB = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Jul-10-2001
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
AC Characteristics
Collector cutoff current
nA
ICBO
VCB = 32 V, IE = 0
BCW61/61FF
-
-
20
VCB = 45 V, IE = 0
BCX71
-
-
20
Collector cutoff current
µA
ICBO
VCB = 32 V, IE = 0 , TA = 150 °C BCW61/61FF
VCB = 45 V, IE = 0 , TA = 150 °C BCX71
Emitter cutoff current
IEBO
-
-
20
-
-
20
-
-
20
nA
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 µA, VCE = 5 V
hFE-grp. A/G
20
140
-
hFE-grp. B/H
30
200
-
hFE-grp. C/J/FF
40
300
-
hFE-grp. D/K/FN
100
460
-
hFE-grp. A/G
120
170
220
hFE-grp. B/H
180
250
310
hFE-grp. C/J/FF
250
350
460
hFE-grp. D/K/FN
380
500
630
hFE-grp. A/G
60
-
-
hFE-grp. B/H
80
-
-
hFE-grp. C/J/FF
100
-
-
hFE-grp. D/K/FN
110
-
-
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE
DC current gain 1)
IC = 50 mA, VCE = 1 V
-
hFE
hFE
1) Pulse test: t ≤=300µs, D = 2%
3
Jul-10-2001
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
Characteristics
Collector-emitter saturation voltage1)
V
VCEsat
IC = 10 mA, IB = 0.25 mA
-
0.12
0.25
IC = 50 mA, IB = 1.25 mA
-
0.2
0.55
IC = 10 mA, IB = 0.25 mA
-
0.7
0.85
IC = 50 mA, IB = 1.25 mA
-
0.83
1.05
IC = 10 µA, VCE = 5 V
-
0.52
-
IC = 2 mA, VCE = 5 V
0.55
0.65
0.75
IC = 50 mA, VCE = 1 V
-
0.78
-
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
8
-
Base-emitter saturation voltage 1)
VBEsat
Base-emitter voltage 1)
VBE(ON)
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
k
Short-circuit input impedance
hFE-grp. h11e
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
-
2.7
-
B/H
-
3.6
-
C/J/FF
-
4.5
-
D/K/FN
-
7.5
-
Open-circuit reverse voltage transf.ratio hFE-grp. h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
10-4
-
1.5
-
B/H
-
2
-
C/J/FF
-
2
-
D/K/FN
-
3
-
1) Pulse test: t ≤=300µs, D = 2%
4
Jul-10-2001
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
AC Characteristics
Short-circuit forward current transf.ratio hFE-grp. h21e
A/G
IC = 2 mA, VCE = 5 V, f = 1 kHz
-
200
-
B/H
-
260
-
C/J/FF
-
330
-
D/K/FN
-
520
-
S
Open-circuit output admittance
hFE-grp. h22e
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
-
18
-
B/H
-
24
-
C/J/FF
-
30
-
D/K/FN
-
50
-
Noise figure
dB
hFE-grp. F
IC = 200 µA, VCE = 5 V, RS = 1 k,
f = 1 kHz, f = 200 Hz
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 10 ... 50 Hz
A/K
-
2
-
FF/FN
-
1
2
hFE-grp. Vn
-
-
0.11
µV
FF/FN
5
Jul-10-2001
BCW61, BCX71
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCBO)
Emitter-base capacitance CEB = f (VEBO)
12
360
BCW 61/BCX 71
EHP00344
CCBO
pF
(C EBO)
mW
10
300
P tot
270
8
240
CEBO
210
6
180
150
4
120
CCBO
90
2
60
30
0
0
15
30
45
60
75
90 105 120
0
10 -1
°C 150
TS
10 1
V CBO (V EBO )
10 0
V
Permissible pulse load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp )
VCE = 5V
10 3
BCW 61/BCX 71
EHP00345
Ptot max
5
Ptot DC
10 3
tp
tp
D=
T
fT
BCW 61/BCX 71
EHP00347
MHz
5
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10 2
5
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 1
10 0
0
5 10 1
5 10 2
mA
10 3
ΙC
tp
6
Jul-10-2001
BCW61, BCX71
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC = f (VBEsat ), hFE = 40
IC = f (VCEsat), h FE = 40
10 2
ΙC
BCW 61/BCX 71
EHP00348
10 2
mA
ΙC
100 ˚C
25 ˚C
-50 ˚C
10 1
10 0
10 0
5
5
0.2
0.4
100 ˚C
25 ˚C
-50 ˚C
10 1
5
0
EHP00349
mA
5
10 -1
BCW 61/BCX 71
0.6
0.8
V
10 -1
1.2
0.1
0
0.2
0.3
V BE sat
DC current gain hFE = f (I C)
VCE = 5V
VCE = 5V
BCW 61/BCX 71
V
0.5
V CEsat
Collector current IC = f (VBE)
10 2
0.4
10 3
EHP00350
Ι C mA
h FE
5
BCW 61/BCX 71
EHP00351
100 ˚C
25 ˚C
10 1
10 2
5
-50 ˚C
5
10
0
5
10 1
100 ˚C
10 -1
25 ˚C
-50 ˚C
5
5
10 -2
0
0.5
V
10 0
10 -2
1.0
10 -1
10 0
10 1
mA 10 2
ΙC
V BE
7
Jul-10-2001
BCW61, BCX71
Collector cutoff current ICBO = f (TA)
h parameter he = f (IC) normalized
VCB = VCEmax
VCE = 5V
BCW 61/BCX 71
10 4
nA
EHP00352
Ι CBO
10 2
BCW 61/BCX 71
EHP00353
he
10
3
10
max
10 2
1
V CE = 5 V
h 11e
5
10 1
h 12e
10
5
typ
10 0
0
h 21e
h 22e
10
-1
0
50
100
C
10
150
-1
10 -1
5
10 0
mA
ΙC
TA
h parameter he = f (VCE ) normalized
Noise figure F = f (V CE)
IC = 0.2mA, R S = 2k, f = 1kHz
IC = 2mA
2.0
BCW 61/BCX 71
he
EHP00354
Ι C = 2 mA
20
F
BCW 61/BCX 71
EHP00355
dB
h 11
1.5
15
1.0
10
h 12
h 22
0.5
0
10 1
5
0
10
20
V
0
10 -1
30
VCE
10 0
10 1
V
10 2
VCE
8
Jul-10-2001
BCW61, BCX71
Noise figure F = f (f)
Noise figure F = f (IC)
IC = 0.2mA, VCE = 5V, RS = 2k
20
F
BCW 61/BCX 71
VCE = 5V, f = 120Hz
EHP00356
20
dB
F
BCW 61/BCX 71
EHP00357
dB
15
15
10
10
RS = 1 MΩ
100 k Ω
10 k Ω
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
0
10 -3
kHz 10 2
f
10 -2
10 -1
ΙC
Noise figure F = f (IC )
Noise figure F = f (IC)
VCE = 5V, f = 1kHz
VCE = 5V, f = 10kHz
20
F
BCW 61/BCX 71
EHP00358
20
dB
F
15
BCW 61/BCX 71
EHP00359
dB
RS = 1 MΩ
15
RS = 1 MΩ 100 k Ω 10 kΩ
100 k Ω
10
10
10 k Ω
500 Ω
1k Ω
5
5
1 kΩ
500 Ω
0
10 -3
mA 10 1
10 0
10 -2
10 -1
0
10 -3
mA 10 1
10 0
ΙC
10 -2
10 -1
mA 10 1
10 0
ΙC
9
Jul-10-2001
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