Diodes BCX5316-13R Pnp silicon planar medium power transistors in sot89 Datasheet

BCX 51 / 52 / 53
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
Features
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Mechanical Data
IC = -1A Continuous Collector Current
Low Saturation Voltage VCE(sat) < -500mV @ -0.5A
Gain groups 10 and 16
Epitaxial Planar Die Construction
Complementary NPN types: BCX54, 55, and 56
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT89
Case Material: Molded Plastic, “Green” Molding
Compound (Note 2)
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.072 grams (Approximate)
Applications
•
•
SOT89
Medium Power Switching or Amplification Applications
AF driver and output stages
C
E
B
C
C
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Note 3)
Product
BCX51TA
BCX5110TA
BCX5116TA
BCX52TA
BCX5210TA
BCX5216TA
BCX53TA
BCX5310TA
BCX5316TA
BCX5316TC
BCX5316-13R
Notes:
Marking
AA
AC
AD
AE
AG
AM
AH
AK
AL
AL
AL
Reel size (inches)
7
7
7
7
7
7
7
7
7
13
13
Tape width (mm)
12
12
12
12
12
12
12
12
12
12
12
Quantity per reel
1,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
4,000
4,000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
xx = Product Type Marking Code, as follows:
xx
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
BCX51 = AA
BCX5110 = AC
BCX5116 = AD
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BCX52 = AE
BCX5210 = AG
BCX5316 = AM
BCX53 = AH
BCX5310 = AK
BCX5316 = AL
June 2011
© Diodes Incorporated
BCX 51 / 52 / 53
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
BCX51
-45
-45
BCX52
-60
-60
-5
-1
-1.5
-100
-200
BCX53
-100
-80
Unit
V
V
V
A
mA
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1
124
10.0
-65 to +150
Unit
W
°C/W
°C/W
°C
4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
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BCX 51 / 52 / 53
120
25mm x 25mm 1oz Cu
Tamb = 25°C
100
80
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Max Power Dissipation (W)
Thermal Resistance (°C/W)
Thermal Characteristics
100
Single pulse
10
1
100µ
Max Power Dissipation (W)
Transient Thermal Impedance
1.0
25mm x 25mm 1oz Cu
Tamb = 25°C
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
25mm x 25mm 1oz Cu
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
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BCX 51 / 52 / 53
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Typ
Max
Unit
-
-
V
IC = -100µA
-
-
V
IC = -10mA
BVEBO
Min
-45
-60
-100
-45
-60
-80
-5
-
V
Collector Cut-off Current
ICBO
-
-
Emitter Cut-off Current
IEBO
-
-
-0.1
-20
-20
hFE
25
40
25
-
250
-
VCE(sat)
VBE(on)
63
100
-
-
160
250
-0.5
-1.0
V
V
Transition Frequency
fT
150
-
-
MHz
Output Capacitance
Cobo
-
-
25
pF
IE = -10µA
VCB = -30V
VCB = -30V, TA = 150°C
VEB = -4V
IC = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2V
IC = -50mA, VCE = -10V
f = 100MHz
VCB = -10V, f = 1MHz
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 6)
BVCBO
BVCEO
Emitter-Base Breakdown Voltage
All versions
Static Forward Current Transfer Ratio (Note 6)
10 gain grp
16 gain grp
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Notes:
nA
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
500
1.0
VCE = -5V
IB = 10mA
IB = 8mA
0.8
400
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
µA
Test Condition
IB = 6mA
0.6
IB = 4mA
0.4
IB = 2mA
T A = 150°C
300
T A = 85°C
200
100
0.2
0
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
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T A = 25°C
T A = -55°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
June 2011
© Diodes Incorporated
0.5
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
TA = -55°C
0.6
TA = 25°C
T A = 85°C
0.4
T A = 150°C
0.2
0.4
0.3
TA = 150°C
0.2
TA = 85°C
TA = 25°C
0.1
VCE = -2V
0
0.001
TA = -55°C
0.01
0.1
1
-IC, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.001
10
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
300
fT, GAIN-BANDWIDTH PRODUCT (MHz)
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
BCX 51 / 52 / 53
1.0
0.8
T A = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
IC / IB = 10
250
200
150
100
VCE = -5V
f = 100MHz
50
0
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
20
40
60
80
100
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
160
140
f = 1MHz
CAPACITANCE(pF)
120
100
80
Cibo
60
40
20
Cobo
0
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
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Package Outline Dimensions
R0
D1
.2
00
C
E
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1
1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
H
L
B
e
B1
e1
8°
(4 X
)
A
D
Suggested Pad Layout
X1
X2 (2x)
Y1
Y3
Y4
Y2
Y
C
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
X (3x)
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2011, Diodes Incorporated
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BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
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June 2011
© Diodes Incorporated
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