ON BD135G Plastic medium-power silicon npn transistor Datasheet

BD135G, BD137G, BD139G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
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Features
• High DC Current Gain
• BD 135, 137, 139 are complementary with BD 136, 138, 140
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1.5 A POWER TRANSISTORS
NPN SILICON
45, 60, 80 V, 12.5 W
Compliant*
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD135G
BD137G
BD139G
VCEO
Collector−Base Voltage
BD135G
BD137G
BD139G
VCBO
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.5
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
1.25
10
Watts
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
12.5
100
Watts
mW/°C
– 55 to + 150
°C
Operating and Storage Junction
Temperature Range
3
BASE
Vdc
45
60
80
1
EMITTER
Vdc
45
60
100
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
TJ, Tstg
YWW
BD1xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
BD1xx
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
10
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
100
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1
G
= Year
= Work Week
= Device Code
xx = 35, 37, 39
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
BD135G
TO−225
(Pb−Free)
500 Units / Box
BD135TG
TO−225
(Pb−Free)
50 Units / Rail
BD137G
TO−225
(Pb−Free)
500 Units / Box
BD139G
TO−225
(Pb−Free)
500 Units / Box
Device
Publication Order Number:
BD135/D
BD135G, BD137G, BD139G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Collector−Emitter Sustaining Voltage*
(IC = 0.03 Adc, IB = 0)
BD135G
BD137G
BD139G
BVCEO*
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TC = 125_C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
DC Current Gain
(IC = 0.005 A, VCE = 2 V)
(IC = 0.15 A, VCE = 2 V)
(IC = 0.5 A VCE = 2 V)
hFE*
Collector−Emitter Saturation Voltage*
(IC = 0.5 Adc, IB = 0.05 Adc)
VCE(sat)*
Base−Emitter On Voltage*
(IC = 0.5 Adc, VCE = 2.0 Vdc)
VBE(on)*
Min
Max
UnIt
Vdc
45
60
80
−
−
−
−
−
0.1
10
−
10
25
40
25
−
250
−
−
0.5
−
1
mAdc
mAdc
−
Vdc
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1000
0.3
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 2 V
150°C
25°C
−55°C
100
10
150°C
IC/IB = 10
0.2
−55°C
25°C
0.1
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
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2
BD135G, BD137G, BD139G
1.2
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
10
VBE(on), BASE−EMITTER ON VOLTAGE (V)
TYPICAL CHARACTERISTICS
VCE = 2 V
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
10
1000
IC, COLLECTOR CURRENT (A)
f = 1 MHz
Cib
100
Cob
10
0.1 ms
5 ms
0.5 ms
1
TJ = 125°C
dc
0.1
BD135
BD137
BD139
0.01
1
0.1
1
10
1
100
10
VR, REVERSE VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Capacitance
Figure 6. Active−Region Safe Operating Area
1.50
PD, POWER DISSIPATION (W)
C, CAPACITANCE (pF)
1.2
1.25
1.00
0.75
0.50
0.25
0
0
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Power Derating
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3
140
160
80
BD135G, BD137G, BD139G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
2
3
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
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BD135/D
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