UTC BD140G-6-T60-K Pnp silicon transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
„
DESCRIPTION
The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP
transistor, designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
The complementary NPN types are the BD135/BD137/ BD139.
1
TO-251
1
TO-126
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BD136L-x-T60-K
BD136G-x-T60-K
BD138L-x-T60-K
BD138G-x-T60-K
BD140L-x-T60-K
BD140G-x-T60-K
BD136L-x-TM3-T
BD136G-x-TM3-T
BD138L-x-TM3-T
BD138G-x-TM3-T
BD140L-x-TM3-T
BD140G-x-TM3-T
Note: Pin Assignment: E: Emitter C: Collector B: Base
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Copyright © 2011 Unisonic Technologies Co., LTD
Package
TO-126
TO-126
TO-126
TO-251
TO-251
TO-251
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
Packing
Bulk
Bulk
Bulk
Tube
Tube
Tube
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BD136-138-140
„
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
-45
Collector-Base Voltage
VCBO
-60
V
-80
-45
Collector-Emitter Voltage
VCEO
-60
V
-80
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
V
Collector Peak Current
ICM
-3
A
Base Current
IB
-0.5
A
TO-126
12.5
Power Dissipation TC≦25℃
PD
W
TO-251
15
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
BD136
BD138
BD140
BD136
BD138
BD140
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
TO-126
TO-251
TO-126
TO-251
RATINGS
100
83
10
8.3
θJA
θJC
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃,unless otherwise specified)
PARAMETER
Collector-Emitter
Sustaining Voltage
SYMBOL
BD136
BD138
BD140
VCEO(SUS)
TEST CONDITIONS
IC =-30mA, IB=0 (Note)
VCB =-30 V, IE=0
VCB =-30 V, IE=0, TC = 125°C
Emitter Cut- off Current
IEBO
VEB = -5 V, IC=0
hFE1
VCE=-2V, IC =-5mA,
DC Current Gain
hFE2
VCE=-2V, IC =-0.5A
hFE3
VCE=-2V, IC =-150mA
Collector-Emitter Saturation Voltage
VCE(SAT) IC =-0.5A, IB = -0.05A (Note)
Base-Emitter Voltage
VBE
IC =-0.5A, VCE =-2 V (Note)
Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 %
Collector Cut-off Current
„
UNIT
MIN
-45
-60
-80
TYP MAX UNIT
V
-0.1
-10
-10
ICBO
25
25
40
250
-0.5
-1
μA
μA
V
V
CLASSIFICATION OF hFE3
RANK
RANGE
6
40~100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
63~160
16
100~250
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PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-013.Ca
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