POINN BD239D Npn silicon power transistor Datasheet

BD239D, BD239E, BD239F
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
●
30 W at 25°C Case Temperature
●
2 A Continuous Collector Current
●
4 A Peak Collector Current
●
Customer-Specified Selections Available
SEPTEMBER 1981 - REVISED MARCH 1997
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD239D
Collector-emitter voltage (RBE = 100 Ω)
BD239E
VCER
Emitter-base voltage
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
120
VCEO
BD239F
Continuous collector current
180
200
BD239D
BD239E
UNIT
160
BD239F
Collector-emitter voltage (IB = 0)
VALUE
140
V
160
V EBO
5
V
IC
2
A
ICM
4
A
IB
0.6
A
Ptot
30
W
Ptot
2
W
½LIC 2
32
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
250
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD239D, BD239E, BD239F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V (BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
TEST CONDITIONS
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
IC = 30 mA
MIN
IB = 0
(see Note 5)
BD239D
120
BD239E
140
BD239F
160
TYP
MAX
UNIT
V
VCE = 160 V
VBE = 0
BD239D
0.2
V CE = 180 V
V BE = 0
BD239E
0.2
V CE = 200 V
V BE = 0
BD239F
0.2
VCE = 90 V
IB = 0
0.3
mA
VEB =
IC = 0
1
µA
5V
mA
Forward current
VCE =
4V
IC = 0.2 A
transfer ratio
V CE =
4V
IC =
1Α
(see Notes 5 and 6)
0.2 A
IC =
1A
(see Notes 5 and 6)
0.7
V
4V
IC =
1A
(see Notes 5 and 6)
1.3
V
Collector-emitter
saturation voltage
Base-emitter
IB =
VCE =
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
40
15
VCE = 10 V
IC = 0.2 A
f = 1 kHz
20
VCE = 10 V
IC = 0.2 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
4.17
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
TYP
ton
Turn-on time
IC = 200 mA
IB(on) = 20 mA
IB(off) = -20 mA
0.3
µs
toff
Turn-off time
V BE(off) = -3.4 V
RL = 150 Ω
tp = 20 µs, dc ≤ 2%
0.8
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
BD239D, BD239E, BD239F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE = 4 V
t p = 300 µs, duty cycle < 2%
TC = 25°C
TC = 80°C
100
10
0·01
0·1
IC = 100 mA
IC = 300 mA
IC = 1 A
1·0
0·1
0·01
0·1
1·0
TCS631AE
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS631AG
1000
hFE - DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC - Collector Current - A
1·0
10
100
1000
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
TCS631AF
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BD239D, BD239E, BD239F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS631AF
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
0·01
1·0
BD239D
BD239E
BD239F
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AB
Ptot - Maximum Power Dissipation - W
40
30
20
10
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
125
150
BD239D, BD239E, BD239F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
MDXXBE
INFORMATION
5
BD239D, BD239E, BD239F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION
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