ISC BD500 Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
BD500/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -50V(Min)
-80V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
VALUE
BD500
-55
BD500B
-85
BD500
-50
BD500B
-80
Collector-Base Voltage
UNIT
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
1.39
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
BD500/B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD500
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MAX
IC= -30mA ;IB= 0
-80
IC= -5A; IB= -0.5A
B
Collector-Emitter
Saturation Voltage
BD500B
IC= -3.5A; IB= -0.35A
BD500
IC= -5A; VCE= -4V
-1.0
V
-1.6
V
-1.0
mA
-1.0
mA
B
Base-Emitter On Voltage
BD500B
UNIT
V
B
BD500
VBE(on)
TYP.
-50
BD500B
VCE(sat)
MIN
IC= -3.5A; VCE= -4V
VCB= -55V;IE= 0
ICBO
Collector Cutoff Current
VCB= -85V;IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
BD500
hFE
15
DC Current Gain
BD500B
fT
IC= -5A; VCE= -4V
Current-Gain—Bandwidth Product
isc Website:www.iscsemi.cn
90
IC= -3.5A; VCE= -4V
IC= -1.0A ; VCE= -10V
2
8
MHz
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