Rohm BD52E51 Free delay time setting cmos voltage detector ic sery Datasheet

Datasheet
Voltage Detector IC Series
Free Delay Time Setting
CMOS Voltage Detector IC Series
BD52Exxx series
BD53Exxx series
●General Description
Rohm's BD52Exxx and BD53Exxx series are highly
accurate, low current consumption Voltage Detector
ICs with a capacitor controlled time delay. The line up
includes BD52Exxx devices with N-channel open drain
output and BD53Exxx devices with CMOS output. The
devices are available for specific detection voltages
ranging from 2.3V to 6.0V in increments of 0.1V.
●Features
Delay Time Controlled by external Capacitor
Two output types (N-channel open drain and CMOS
output)
Ultra-low current consumption
Very small, lightweight and thin package
Package SSOP5 is similar to SOT-23-5(JEDEC)
●Typical Application Circuit
VDD1
●Key Specifications
Detection voltage:
2.3V to 6.0V (Typ.)
0.1V steps
High accuracy detection voltage:
±1.0%
Ultra-low current consumption:
0.95µA (Typ.)
●Package
SSOP5:
2.90mm x 2.80mm x 1.25mm
●Applications
Circuits using microcontrollers or logic circuits that
require a reset.
VDD2
VDD1
RL
RST
BD52Exxx
Micro
RST controller
BD53Exxx
Micro
controller
CT
CT
CL
CL
(Capacitor for
noise filtering)
(Capacitor for
noise filtering)
GND
Open Drain Output type
BD52Exxx Series
●Connection Diagram
SSOP5
CT
N.C.
TOP VIEW
GND
CMOS Output type
BD53Exxx Series
Lot. No
Marking
VOUT
VDD GND
●Pin Descriptions
SSOP5
PIN No.
1
2
3
4
Symbol
VOUT
VDD
GND
N.C.
5
CT
Function
Reset Output
Power Supply Voltage
GND
Unconnected Terminal
Capacitor connection terminal for
output delay time
○Product structure:Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays
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TSZ22111・14・001
22.May.2013 Rev.004
BD52Exxx series
Datasheet
BD53Exxx series
●Ordering Information
B
D
x
Part
Number
E
x
Output Type
52 : Open Drain
53 : CMOS
x
x
x
-
Reset Voltage Value Package
23 : 2.3V
G : SSOP5
0.1V step
60 : 6.0V
T
R
Packaging and
forming specification
TR : Embossed tape
and reel
SSOP5
5
4
1
2
0.2Min.
+0.2
1.6 −0.1
2.8±0.2
<Tape and Reel information>
+6 °
4° −4°
2.9±0.2
3
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
1pin
+0.05
0.13 −0.03
0.05±0.05
1.1±0.05
1.25Max.
)
+0.05
0.42 −0.04
0.95
0.1
Direction of feed
Reel
(Unit : mm)
∗ Order quantity needs to be multiple of the minimum quantity.
●Lineup
Output Type
Open Drain
Detection Voltage Marking
Part Number
6.0V
Ph
BD52E60
5.9V
Pg
BD52E59
5.8V
Pf
BD52E58
5.7V
Pe
BD52E57
5.6V
Pd
BD52E56
5.5V
Pc
BD52E55
5.4V
Pb
BD52E54
5.3V
Pa
BD52E53
5.2V
Ny
BD52E52
5.1V
Nr
BD52E51
5.0V
Np
BD52E50
4.9V
Nn
BD52E49
4.8V
Nm
BD52E48
4.7V
Nk
BD52E47
4.6V
Nh
BD52E46
4.5V
Ng
BD52E45
4.4V
Nf
BD52E44
4.3V
Ne
BD52E43
4.2V
Nd
BD52E42
4.1V
Nc
BD52E41
4.0V
Nb
BD52E40
3.9V
Na
BD52E39
3.8V
My
BD52E38
3.7V
Mr
BD52E37
3.6V
Mp
BD52E36
3.5V
Mn
BD52E35
3.4V
Mm
BD52E34
3.3V
Mk
BD52E33
3.2V
Mh
BD52E32
3.1V
Mg
BD52E31
3.0V
Mf
BD52E30
2.9V
Me
BD52E29
2.8V
Md
BD52E28
2.7V
Mc
BD52E27
2.6V
Mb
BD52E26
2.5V
Ma
BD52E25
2.4V
Ly
BD52E24
2.3V
Lr
BD52E23
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Marking
Ud
Uc
Ub
Ua
Ry
Rr
Rp
Rn
Rm
Rk
Rh
Rg
Rf
Re
Rd
Rc
Rb
Ra
Qy
Qr
Qp
Qn
Qm
Qk
Qh
Qg
Qf
Qe
Qd
Qc
Qb
Qa
Py
Pr
Pp
Pn
Pm
Pk
CMOS
Part Number
BD53E60
BD53E59
BD53E58
BD53E57
BD53E56
BD53E55
BD53E54
BD53E53
BD53E52
BD53E51
BD53E50
BD53E49
BD53E48
BD53E47
BD53E46
BD53E45
BD53E44
BD53E43
BD53E42
BD53E41
BD53E40
BD53E39
BD53E38
BD53E37
BD53E36
BD53E35
BD53E34
BD53E33
BD53E32
BD53E31
BD53E30
BD53E29
BD53E28
BD53E27
BD53E26
BD53E25
BD53E24
BD53E23
TSZ02201-0R7R0G300080-1-2
22.May.2013 Rev.004
BD52Exxx series
Datasheet
BD53Exxx series
●Absolute maximum ratings
Parameter
Power Supply Voltage
Nch Open Drain Output
Output Voltage
CMOS Output
Output Current
Power
*1*2
SSOP5
Dissipation
Operating Temperature
Ambient Storage Temperature
Symbol
VDD-GND
Unit
V
Io
Limits
-0.3 to +10
GND-0.3 to +10
GND-0.3 to VDD+0.3
80
Pd
540
mW
Topr
Tstg
-40 to +105
-55 to +125
°C
°C
VOUT
V
mA
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
VDET=2.5V
Ta=+25°C
Ta=-40°C to 85°C
Min.
VDET(T)
×0.99
2.475
2.418
VDET=3.0V
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
2.5
-
Max.
VDET(T)
×1.01
2.525
2.584
2.404
2.970
2.901
3.0
-
2.597
3.030
3.100
VDET=3.3V
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
2.885
3.267
3.191
3.3
-
3.117
3.333
3.410
VDET=4.2V
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
3.173
4.158
4.061
4.2
-
3.428
4.242
4.341
VDET=4.8V
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
4.039
4.752
4.641
4.8
-
4.364
4.848
4.961
0.80
0.85
0.90
0.95
0.75
0.80
0.85
0.90
-
4.987
2.40
2.55
2.70
2.85
2.25
2.40
2.55
2.70
0.5
0.5
-
*1
VDD=H L, RL=470kΩ
Detection Voltage
VDET
Ta=85°C to 105°C
4.616
VDET =2.3-3.1V
VDET =3.2-4.2V
Circuit Current when ON
IDD1
VDD=VDET-0.2V
VDET =4.3-5.2V
VDET =5.3-6.0V
VDET =2.3-3.1V
VDET =3.2-4.2V
Circuit Current when OFF
IDD2
VDD=VDET+2.0V
VDET =4.3-5.2V
VDET =5.3-6.0V
VOL≤0.4V, Ta=25 to 105°C, RL=470kΩ
0.95
Operating Voltage Range
VOPL
VOL≤0.4V, Ta=-40 to 25°C, RL=470kΩ
1.20
VDD=1.5V, ISINK = 0.4 mA, VDET=2.3-6.0V
‘Low’ Output Voltage (Nch)
VOL
VDD=2.4V, ISINK = 2.0 mA, VDET=2.7-6.0V
VDD=4.8V, ISOURCE=0.7 mA, VDET(2.3V to 4.2V) VDD-0.5
‘High’ Output Voltage (Pch)
VOH
VDD=6.0V, ISOURCE=0.9 mA, VDET(4.3V to 5.2V) VDD-0.5
VDD=8.0V, ISOURCE=1.1 mA, VDET(5.3V to 6.0V) VDD-0.5
VDET (T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)
RL: Pull-up resistor to be connected between VOUT and power supply.
Design Guarantee. (Outgoing inspection is not done on all products.)
*1 Guarantee is Ta=25°C.
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Limit
Typ.
3/12
VDET(T)
Unit
V
µA
µA
V
V
V
TSZ02201-0R7R0G300080-1-2
22.May.2013 Rev.004
BD52Exxx series
Datasheet
BD53Exxx series
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C) - continued
Parameter
Leak Current when OFF
Symbol
Ileak
Limit
Condition
*1
VDD=VDS=10V
VDD=VDET×1.1, VDET=2.3-2.6V, RL=470kΩ
VDD=VDET×1.1, VDET=2.7-4.2V, RL=470kΩ
CT pin Threshold Voltage
VCTH
VDD=VDET×1.1, VDET=4.3-5.2V, RL=470kΩ
VDD=VDET×1.1, VDET=5.3-6.0V, RL=470kΩ
Output Delay Resistance
CT pin Output Current
Detection Voltage
Temperature coefficient
Hysteresis Voltage
RCT
ICT
VDD=VDET×1.1 VCT=0.5V
VCT=0.1V VDD=0.95V
VCT=0.5V VDD=1.5V
VDET/∆T Ta=-40°C to 105°C
∆ VDET VDD=L H L, RL=470kΩ
*1
*1
Unit
Min.
VDD
×0.30
VDD
×0.30
VDD
×0.35
VDD
×0.40
5.5
15
150
Typ.
VDD
×0.40
VDD
×0.45
VDD
×0.50
VDD
×0.50
9
40
240
Max.
0.1
VDD
×0.60
VDD
×0.60
VDD
×0.60
VDD
×0.60
12.5
-
-
±100
±360
ppm/°C
VDET
×0.03
VDET
×0.05
VDET
×0.08
V
µA
V
MΩ
µA
VDET (T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)
RL: Pull-up resistor to be connected between VOUT and power supply.
Design Guarantee. (Outgoing inspection is not done on all products.)
*1 Guarantee is Ta=25°C.
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BD52Exxx series
Datasheet
BD53Exxx series
●Block Diagrams
VDD
VOUT
Vref
CT
GND
Figure.1
BD52Exxx Series
VDD
VOUT
Vref
CT
GND
Figure.2
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BD52Exxx series
Datasheet
BD53Exxx series
●Typical Performance Curves
"LOW" OUTPUT CURRENT : IOL [mA]
CIRCUIT CURRENT : IDD [µA]
2.0
BD5242G/FVE】
【
【BD52E42G】
【BD53E42G】
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
8
9 10
18
【BD5242G/FVE】
【BD52E42G】
15
【BD53E42G】
12
9
6
3
VDD =1.2V
0
0.0
0.5
1.0
1.5
2.0
2.5
DRAIN-SOURCE VOLTAGE : VDS[V]
VDD SUPPLY VOLTAGE :VDD [V]
Figure.4 “Low” Output Current
Figure.3 Circuit Current
9
45
【BD5342G/FVE】
【BD53E42G】
40
OUTPUT VOLTAGE : VOUT [V]
"HIGH" OUTPUT CURRENT : IOH [mA]
VDD =2.4V
35
30
25
20
VDD =8.0V
15
VDD =6.0V
10
5
VDD =4.8V
BD5242G/FVE】
【
【BD52E42G】
8
7
【BD53E42G】
6
5
4
3
Ta=25℃
2
1
Ta=25℃
0
0
0
1
2
3
4
5
6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
DRAIN-SOURCE VOLTAGE : VDS[V]
VDD SUPPLY VOLTAGE :VD D [V]
Figure.5 “High” Output Current
Figure.6 I/O Characteristics
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BD52Exxx series
Datasheet
BD53Exxx series
●Typical Performance Curves – continued
450
CT OUTPUT CURRENT : ICT [µA]
OUTPUT VOLTAGE: VOUT [V]
1.0
【BD52E42G】
【BD5242G/FVE】
0.8
【BD53E42G】
0.6
0.4
0.2
0.0
0.0
400
【BD5242G/FVE】
【BD52E42G】
350
【BD53E42G】
300
250
200
150
100
50
0
0.5
1.0
1.5
2.0
0
2.5
CIRCUIT CURRENT WHEN ON : IDD1 [µA]
DETECTION VOLTAGE : V DET[V]
5.6
BD5242G/FVE】
【BD52E42G】
【
5.2
【BD53E42G】
Low to high(VDET+ ΔVDET)
4.4
4.0
High to low(VDET)
3.6
0
40
80
4
5
1.5
【BD52E42G】
BD5242G/FVE】
【
【BD53E42G】
1.0
0.5
0.0
-40 -20
0
20
40
60
80
100
TEMPERATURE : Ta[℃]
TEMPERATURE : Ta[℃]
Figure.10 Circuit Current when ON
Figure.9 Detection Voltage
Release Voltage
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3
Figure.8 CT Terminal Current
Figure.7 Operating Limit Voltage
~
~
3.2
-40
2
VDD SUPPLY VOLTAGE : VDD [V]
VDD SUPPLY VOLTAGE : VDD [V]
4.8
1
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BD52Exxx series
Datasheet
BD53Exxx series
●Typical Performance Curves – continued
1.5
MINIMUM OPERATING VOLTAGE : V OPL[V]
CIRCUIT CURRENT WHEN OFF : I DD2 [µA]
1.5
【BD52E42G】
BD5242G/FVE】
【
【BD53E42G】
1.0
0.5
0.0
-40 -20
0
20
40
60
80
100
【BD52E42G】
【BD5242G/FVE】
【BD53E42G】
1.0
0.5
0.0
-40 -20
Figure.11 Circuit Current when OFF
【BD53E42G】
60
80
100
10000
【BD5242G/FVE】
【BD52E42G】
DELAY TIME : tPLH [ms]
RESISTANCE OF C T : RCT[MΩ]
11
40
Figure.12 Operating Limit Voltage
13
BD5242G/FVE】
【BD52E42G】
【
20
TEMPERATURE : Ta[℃]
TEMPERATURE : Ta[℃]
12
0
10
9
8
7
6
1000
【BD53E42G】
100
10
1
5
4
-40 -20
0
20
40
60
80
0.1
0.0001
100
0.01
0.1
CAPACITANCE OF C T : C CT[µF]
TEMPERATURE : Ta[℃]
Figure.14 Delay Time (tPLH) and
CT Terminal External Capacitance
Figure.13 CT Terminal Circuit Resistance
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BD52Exxx series
Datasheet
BD53Exxx series
●Application Information
Explanation of Operation
For both the open drain type (Figure.15) and the CMOS output type (Figure.16), the detection and release voltages are
used as threshold voltages. When the voltage applied to the VDD pins reaches the applicable threshold voltage, the VOUT
terminal voltage switches from either “High” to “Low” or from “Low” to “High”. Please refer to the Timing Waveform and
Electrical Characteristics for information on hysteresis. Because the BD52Exxx series uses an open drain output type, it is
necessary to connect a pull up resistor to VDD or another power supply if needed [The output “High” voltage (VOUT) in this
case becomes VDD or the voltage of the other power supply].
VDD
VDD
VDD
RL
R1
Q2
R1
RESET
Vref
VDD
Vref
RESET
VOUT
R2
R2
Q1
Q3
VOUT
Q1
Q3
R3
R3
GND
GND
CT
CT
Figure.15 (BD52ExxxType Internal Block Diagram)
Figure.16 (BD53ExxxType Internal Block Diagram)
Setting of Detector Delay Time
It is possible to set the delay time at the rise of VDD using a capacitor connected to the Ct terminal.
Delay time at the rise of VDD tPLH:Time until Vout rises to 1/2 of VDD after VDD rises beyond the release voltage(VDET+∆VDET)
tPLH = -CCT×RCT×ln
VDD-VCTH
VDD
CCT: CT pin External Capacitance
RCT: CT pin Internal Impedance(Please refer to Electrical Characteristics.)
VCTH: CT pin Threshold Voltage(Please refer to Electrical Characteristics.)
ln : Natural Logarithm
Reference Data of Falling Time (tPHL) Output
Examples of Falling Time (tPHL) Output
Part Number
BD52E27G
tPHL[µs] -40°C
30.8
tPHL[µs] ,+25°C
30
tPHL[µs],+105°C
28.8
BD53E27G
26.8
26
24.8
*This data is for reference only.
The figures will vary with the application, so please confirm actual operating conditions before use.
Timing Waveforms
Example: the following shows the relationship between the input voltage VDD, the CT Terminal Voltage VCT and the output
voltage VOUT when the input power supply voltage VDD is made to sweep up and sweep down (The circuits are those in
Figure.15 and 16).
1 When the power supply is turned on, the output is unstable
VDD
from after over the operating limit voltage (VOPL) until tPHL.
Therefore it is possible that the reset signal is not outputted when
VDET+ΔVDET
⑤
VDET
the rise time of VDD is faster than tPHL.
2 When VDD is greater than VOPL but less than the reset release
VOPL
0V
voltage (VDET+∆VDET), the CT terminal (VCT) and output (VOUT)
voltages will switch to L.
VCT
3 If VDD exceeds the reset release voltage (VDET+∆VDET), then
1/2 VDD
VOUT switches from L to H (with a delay due to the CT terminal).
4 If VDD drops below the detection voltage (VDET) when the
power supply is powered down or when there is a power supply
fluctuation, VOUT switches to L (with a delay of tPHL).
VOUT
tPLH
tPHL
tPLH
5 The potential difference between the detection voltage and the
tPHL
release voltage is known as the hysteresis width (∆VDET). The
system is designed such that the output does not toggle with
① ②
③ ④
power supply fluctuations within this hysteresis width, preventing
malfunctions due to noise.
Figure.17 Timing Waveform
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BD52Exxx series
Datasheet
BD53Exxx series
●Circuit Applications
1) Examples of a common power supply detection reset circuit
VDD1
VDD2
RL
RST
BD52Exxx
Micro
controller
CT
CL
(Noise-filtering
Capacitor)
GND
Figure.18 Open Drain Output Type
CASE1: Power supply of the microcontroller (VDD2)
differs from the power supply of the reset detection
(VDD1).
Use an open drain output type (BD52Exxx) with a load
resistance RL attached as shown Figure.18.
CASE2: Power supply of the microcontroller (VDD1) is the
same as the power supply of the reset detection (VDD1).
Use a CMOS output type (BD53Exxx) device or open
drain output type (BD52Exxx) device with a pull up
resistor attached between the output and VDD1.
VDD1
Micro
RST controller
BD53Exxx
Application examples of BD52Exxx series (Open Drain
output type) and BD53Exxx series (CMOS output type)
are shown below.
CT
CL
(Noise-filtering
Capacitor)
When a capacitance CL for noise filtering is connected to
the VOUT pin (the reset signal input terminal of the
microcontroller), please take into account the waveform
of the rise and fall of the output voltage (VOUT).
Please refer to Operational Notes for recommendations
on resistor and capacitor values.
GND
Figure.19 CMOS Output Type
2) The following is an example of a circuit application in which an OR connection between two types of detection voltage
resets the microcontroller.
VDD1
VDD2
VDD3
RL
BD52Exxx
NO.1
BD52Exxx
NO.2
RST
microcontroller
CT
CT
GND
Fig.20
To reset the microcontroller when many independent power supplies are used in the system, OR connect an open drain
output type (BD52Exxx series) to the microcontroller’s input with pull-up resistor to the supply voltage of the microcontroller
(VDD3) as shown in Fig. 20. By pulling-up to VDD3, output “High” voltage of micro-controller power supply is possible.
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BD52Exxx series
Datasheet
BD53Exxx series
3) Examples of the power supply with resistor dividers
In applications wherein the power supply voltage of an IC comes from a resistor divider circuit, an in-rush current will flow
into the circuit when the output level switches from “High” to “Low” or vice versa. In-rush current is a sudden surge of
current that flows from the power supply (VDD) to ground (GND) as the output logic changes its state. This current flow
may cause malfunction in the systems operation such as output oscillations, etc.
Figure.21
V1
IDD
R2
I1
R1
Through
Current
VDD
BD52Exxx
BD53Exxx
CIN
VOUT
CL
GND
VDD
VDET
0
When an in-rush current (I1) flows into the circuit (Refer to Fig. 21) at the time when output switches from “Low” to “High”,
a voltage drop of I1×R2 (input resistor) will occur in the circuit causing the VDD supply voltage to decrease. When the VDD
voltage drops below the detection voltage, the output will switch from “High” to “Low”. While the output voltage is at “Low”
condition, in-rush current will stop flowing and the voltage drop will be reduced. As a result, the output voltage will switches
again from “Low” to “High” which causes an in-rush current and a voltage drop. This operation repeats and will result to
oscillation.
V D D - ID D P eak C urrent Ta=25°C
10
B D 52Exxx
B D 53Exxx
ID D -peak[m A ]
1
0.1
0.01
0.001
3
4
5
6
7
8
9
10
V D D [V ]
Figure.22 IDD Peak Current vs. Power Supply Voltage
* This data is for reference only.
The figures will vary with the application, so please confirm actual operating conditions before use.
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BD52Exxx series
Datasheet
BD53Exxx series
●Operational Notes
1) Absolute maximum ratings
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such
as adding a fuse, in case the IC is operated over the absolute maximum ratings.
2)
Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
3)
Recommended operating conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
4)
Bypass Capacitor for Noise Rejection
To help reject noise, put a 1µF capacitor between VDD pin and GND and 1000pF capacitor between VOUT pin and GND.
Be careful when using extremely big capacitor as transient response will be affected.
5)
Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
6)
Operation under strong electromagnetic field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
7)
The VDD line impedance might cause oscillation because of the detection current.
8)
A VDD to GND capacitor (as close connection as possible) should be used in high VDD line impedance condition.
9)
Lower than the mininum input voltage puts the VOUT in high impedance state, and it must be VDD in pull up (VDD)
condition.
10) External parameters
The recommended value of RL Resistor is 50kΩ to 1MΩ. The recommended value of CT Capacitor is over 100pF to
0.1µF. There are many factors (board layout, etc) that can affect characteristics. Please verify and confirm using
practical applications.
11) Power on reset operation
Please note that the power on reset output varies with the VDD rise time. Please verify the behavior in the actual
operation.
12) Testing on application boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
13) Rush current
When power is first supplied to the IC, rush current may flow instantaneously. It is possible that the charge current to
the parasitic capacitance of internal photo diode or the internal logic may be unstable. Therefore, give special
consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of connections.
14) CT pin discharge
Due to the capabilities of the CT pin discharge transistor, the CT pin may not completely discharge when a short input
pulse is applied, and in this case the delay time may not be controlled. Please verify the actual operation.
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Datasheet
Notice
●General Precaution
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ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2) All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
●Precaution on using ROHM Products
1) Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment, transport
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Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
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2)
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
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H2S, NH3, SO2, and NO2
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residue after soldering
[h] Use of the Products in places subject to dew condensation
4)
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5)
Please verify and confirm characteristics of the final or mounted products in using the Products.
6)
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7)
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8)
Confirm that operation temperature is within the specified range described in the product specification.
9)
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
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Datasheet
●Precaution for Mounting / Circuit board design
1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2)
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
●Precautions Regarding Application Examples and External Circuits
1) If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2)
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
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incurred by you or third parties arising from the use of such information.
●Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
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isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
●Precaution for Storage / Transportation
1) Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2)
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3)
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4)
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
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5)
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ROHM, its affiliated companies or third parties.
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