isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD720 DESCRIPTION ·DC Current Gain: hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) ·Complement to type BD719 APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -7 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD720 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V -1.4 V VCB= -60V; IE= 0 -50 μA VCB= -30V; IE= 0; TC= 150℃ -1 mA ICBO CONDITIONS MIN TYP. MAX -60 UNIT V B Collector Cutoff Current ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 40 hFE-2 DC Current Gain IC= -2A; VCE= -4V 20 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 3 fT B MHz Switching Times ton Turn-On time 0.1 μs 0.4 μs IC= -1A; IB1= -IB2= -0.1A; VCC= -20V toff Turn-Off time isc Website：www.iscsemi.cn 2